IXGT30N60C3D1 IXYS, IXGT30N60C3D1 Datasheet - Page 7

• Manufacturer Part Number: IXGT30N60C3D1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGT30N60C3D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 47
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.33
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): 30
• Rthjc, Max, Diode, (ºc/w): 0.90
• Package Style: TO-268

Z
Fig. 27. Transient thermal resistance junction to case
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I
0.001
F
K
thJC
Fig. 21. Forward current I
0.01
K/W
f
Fig. 24. Dynamic parameters Q
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0
1
0
0
T
T
VJ
VJ
=150°C
=100°C
versus T
I
40
RM
1
0.0001
Q
VJ
r
80
2
T
VJ
V
T
120
VJ
F
F
=25°C
versus V
3
°C
0.001
V
r
160
, I
RM
F
t
Q
rr
1000
r
800
600
400
200
nC
Fig. 22. Reverse recovery charge Q
90
80
70
60
ns
Fig. 25. Recovery time t
0
100
0.01
0
200
T
V
versus -di
-di
VJ
R
= 100°C
= 300V
I
I
I
F
F
F
F
/dt
= 60A
= 30A
= 15A
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
T
V
0.1
F
VJ
R
-di
/dt
600
= 100°C
= 300V
F
-di
/dt
t
F
/dt
rr
A/μs
s
800
A/μs
versus
DSEP 29-06
1000
1000
1
r
I
V
RM
FR
30
25
20
15
10
20
15
10
A
Fig. 23. Peak reverse current I
V
5
0
5
0
Fig. 26. Peak forward voltage V
Constants for Z
0
0
1
2
3
i
T
V
T
I
F
VJ
VJ
R
200
200
= 100°C
= 300V
= 100°C
t
= 30A
fr
versus -di
and t
IXGH30N60C3D1
IXGT30N60C3D1
I
I
I
F
F
F
400
400
R
0.502
0.193
0.205
= 60A
= 30A
= 15A
fr
thi
V
versus di
thJC
FR
(K/W)
600
600
calculation:
F
/dt
di
-di
F
/dt
F
/dt
A/μs
A/μs
800
800
F
/dt
t
0.0052
0.0003
0.0162
i
(s)
1000
1000
RM
FR
1.00
0.75
0.50
0.25
0.00
μs
t
fr