IXGA30N60C3D4 IXYS, IXGA30N60C3D4 Datasheet - Page 4

• Manufacturer Part Number: IXGA30N60C3D4
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGA30N60C3D4

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.0
• Tfi, Typ, Tj=25°c, Igbt, (ns): 47
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.33
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 2.5
• Package Style: TO-263

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
10,000
0.01
1,000
0.1
0.00001
100
1
10
24
20
16
12
8
4
0
0
0
f
= 1 MHz
10
5
20
10
Fig. 7. Transconductance
0.0001
Fig. 9. Capacitance
15
30
T
J
= - 40ºC
I
V
C
CE
- Amperes
- Volts
40
20
25ºC
125ºC
50
25
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
0.001
60
30
70
35
Pulse Width - Seconds
80
40
0.01
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
100
0
V
I
I
C
G
CE
T
R
dv / dt < 10V / ns
J
= 20A
= 10 mA
G
= 300V
= 125ºC
= 5Ω
5
Fig. 10. Reverse-Bias Safe Operating Area
200
0.1
10
Fig. 8. Gate Charge
300
Q
15
G
- NanoCoulombs
V
CE
20
- Volts
IXGA30N60C3D4
IXGP30N60C3D4
400
1
25
500
30
35
600
10
40