IXGX50N60A2D1 IXYS, IXGX50N60A2D1 Datasheet
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Manufacturer Part Number
IXGX50N60A2D1
Description
Low-Frequency Range (DC-15khz), Low Vcesat w/ Diode
Specifications of IXGX50N60A2D1
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
50
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.4
Tfi, Typ, Tj=25°c, Igbt, (ns)
250
Eoff, Typ, Tj=125°c, Igbt, (mj)
4.1
Rthjc, Max, Igbt, (°c/w)
0.31
If, Tj=110°c, Diode, (a)
38
Rthjc, Max, Diode, (ºc/w)
0.65
Available stocks
Part Number:
IXGX50N60A2D1
IGBT with Diode
© 2004 IXYS All rights reserved
Low Saturation Voltage
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
I
I
V
CM
CES
GES
C25
C110
F110
JM
stg
GEM
J
GE(th)
CE(sat)
CES
CGR
GES
C
d
I
V
V
V
I
Note 1
C
C
CE
GE
CE
Test Conditions
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
Clamped inductive load @ V
T
Mounting torque, TO-264
TO-264
PLUS247
J
J
C
C
C
C
GE
C
= 250 µA, V
= V
= 0 V
= 0 V, V
= 50 A, V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C (limited by leads)
= 110°C
= 110°C (50N60B2D1 Diode)
= 25°C, 1 ms
= 15 V, T
= 25°C
CES
GE
GE
= ±20 V
= 15 V
CE
VJ
= 125°C, R
= V
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
CE
(T
J
J
J
J
Advance Technical Data
= 25°C
= 125°C
= 125°C
≤ 600 V
= 25°C, unless otherwise specified)
IXGK 50N60A2D1
IXGX 50N60A2D1
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
I
1.13/10 Nm/lb.in.
1.1
CM
= 80
600
600
±20
±30
200
400
300
150
75
50
38
10
6
±100
Max.
600
5.0
1.4
5
°C
°C
°C
°C
mA
W
µA
nA
V
V
V
V
A
A
A
A
A
g
g
V
V
V
PLUS247
(IXGX)
Features
•
•
•
Applications
•
•
•
Advantages
•
•
V
I
V
TO-264
(IXGK)
G = Gate
E = Emitter
C25
Low on-state voltage IGBT and
High current handling capability
MOS Gate turn-on for drive simplicity
Lighting controls
Heating controls
AC/DC relays
Space savings (two devices in one
package)
Easy to mount with 1 screw or spring
clip
CES
CE(sat)
anti-parallel diode in one package
G
C
C = Collector
Tab = Collector
C
E
= 600 V
=
= 1.4 V
E
75 A
DS99275(12/04)
(TAB)
(TAB)
Related parts for IXGX50N60A2D1
IXGX50N60A2D1 Summary of contents
... CES ± GES CE(sat Note 1 © 2004 IXYS All rights reserved Advance Technical Data IXGK 50N60A2D1 IXGX 50N60A2D1 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 200 = 10 Ω ≤ ...
... Note 1 R thJC Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° ...
... IXYS All rights reserved IXGK 50N60A2D1 IXGX 50N60A2D1 ...
... IXYS reserves the right to change limits, test conditions, and dimensions. IXGK 50N60A2D1 IXGX 50N60A2D1 ...
... IXYS All rights reserved IXGK 50N60A2D1 IXGX 50N60A2D1 ...
... IXYS reserves the right to change limits, test conditions, and dimensions. IXGK 50N60A2D1 IXGX 50N60A2D1 ...
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