IXGR72N60B3D1 IXYS, IXGR72N60B3D1 Datasheet - Page 7

• Manufacturer Part Number: IXGR72N60B3D1
• Description: Mid-Frequency Range (15khz-40khz), w/ Diode
• Manufacturer: IXYS

Specifications of IXGR72N60B3D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.80
• Tfi, Typ, Tj=25°c, Igbt, (ns): 90
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.20
• Rthjc, Max, Igbt, (°c/w): 0.62
• If, Tj=110°c, Diode, (a): 36
• Rthjc, Max, Diode, (ºc/w): 0.85
• Package Style: ISOPLUS 247

Fig. 21. Forward Current I
Fig. 24. Dynamic Paraments Q
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0.0001
Fig. 27. Maximum transient thermal impedance (for diode)
Fig. 27. Maximum Transient Thermal Impeadance Juection to Case (for Diode)
I
0.001
Z
F
K
0.01
K/W
thJC
160
140
120
100
f
2.0
1.5
1.0
0.5
0.0
0.1
0.00001
A
80
60
40
20
1.000
0.100
0.010
0.001
0
1
0
0
0.0001
Versus T
I
T
40
RM
VJ
= 150°C
vJ
Q
100°C
25°C
1
RM
0.0001
80
F
Versus V
T
VJ
V
120
F
r,
I
2
RM
0.001
°C
0.001
F
V
160
Q
t
r
rr
4000
3000
2000
1000
Fig. 22. Reverse Recorvery Charge Q
Fig. 25. Recorvery Time t
140
130
120
110
100
nC
ns
90
80
0
100
0.01
0
T
V
Versus -di
-di
VJ
R
= 100°C
= 300V
200
0.01
F
I
F
/dt
= 120A, 60A, 30A
400
Pulse Width [ s ]
F
I
F
/dt
= 30A, 60A, 120A
0.1
-di
600
F
-di
/dt
T
V
rr
VJ
R
t
F
Versus
/dt
= 100°C
= 300V
A/μs
s
800
DSEP 2x61-06A
A/μs
1000
1000
0.1
1
r
I
V
RM
FR
80
60
40
20
20
15
10
A
Fig. 23. Peak ReverseCurrent I
Fig. 26. Peak Forward Voltage V
0
V
5
0
IXGR72N60B3D1
0
0
T
V
VJ
R
= 100°C
= 300V
t
T
I
rr
200
200
and t
F
Versus -di
VJ
= 60A
= 100°C
I
F
1
= 120A, 60A, 30A
rr
400
400
Versus -di
F
/dt
600
600
V
di
-di
FR
F
IXYS REF: G_72N60B3(76)02-10-09-D
/dt
F
F
/dt
/dt
A/μs
A/μs
800
800
RM
1000
1000
RM
1.6
1.2
0.8
0.4
0.0
μs
10
t
fr