IXGK120N60A3 IXYS, IXGK120N60A3 Datasheet - Page 4

• Manufacturer Part Number: IXGK120N60A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGK120N60A3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 200
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 120
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.35
• Tfi, Typ, Tj=25°c, Igbt, (ns): 260
• Eoff, Typ, Tj=125°c, Igbt, (mj): 10.4
• Rthjc, Max, Igbt, (°c/w): 0.16
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
1,000
200
180
160
140
120
100
1.000
0.100
0.010
0.001
80
60
40
20
100
0
0.00001
0
0
20
f
= 1 MHz
5
40
Fig. 7. Transconductance
10
60
Fig. 9. Capacitance
0.0001
80
15
I
C
V
100
- Amperes
CE
20
- Volts
120
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
140
25
160
0.001
30
125ºC
T
180
J
25ºC
= - 40ºC
35
200
Pulse Width - Seconds
220
40
0.01
16
14
12
10
220
200
180
160
140
120
100
8
6
4
2
0
80
60
40
20
0
0
100
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
T
R
dV / dt < 10V / ns
C
G
CE
50
150
J
G
= 120A
= 10mA
= 125ºC
= 1.5Ω
= 300V
200
100
0.1
250
150
Fig. 8. Gate Charge
Q
G
300
200
- NanoCoulombs
V
350
CE
250
- Volts
400
IXGK120N60A3
IXGX120N60A3
300
1
450
350
500
IXYS REF: G_120N60A3(86)02-11-09-B
400
550
450
600
10
500
650