IXGK320N60B3 IXYS, IXGK320N60B3 Datasheet - Page 3
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IXGK320N60B3
Manufacturer Part Number
IXGK320N60B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet
1.IXGK320N60B3.pdf
(6 pages)
Specifications of IXGK320N60B3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
320
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
170
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.6
Tfi, Typ, Tj=25°c, Igbt, (ns)
185
Eoff, Typ, Tj=125°c, Igbt, (mj)
5
Rthjc, Max, Igbt, (°c/w)
0.125
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-264
© 2010 IXYS CORPORATION, All Rights Reserved
350
300
250
200
150
100
300
250
200
150
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
50
0
0
3.5
-50
0
V
GE
= 15V
4.0
-25
0.5
Fig. 1. Output Characteristics @ T
Fig. 3. Dependence of V
4.5
0
1
Fig. 5. Input Admittance
Junction Temperature
T
J
5.0
25
- Degrees Centigrade
V
V
GE
1.5
CE
V
= 15V
GE
- Volts
11V
9V
5.5
50
- Volts
I
I
I
C
C
C
= 320A
= 160A
= 80A
2
T
J
6.0
75
= 125ºC
6V
5V
8V
7V
- 40ºC
CE(sat)
25ºC
2.5
J
100
6.5
on
= 25ºC
3
125
7.0
150
3.5
7.5
350
300
250
200
150
100
280
240
200
160
120
3.5
3.0
2.5
2.0
1.5
1.0
50
80
40
0
0
0
0
5
6
0.5
Fig. 2. Output Characteristics @ T
50
7
Fig. 4. Collector-to-Emitter Voltage
100
vs. Gate-to-Emitter Voltage
1
Fig. 6. Transconductance
8
I
C
9
1.5
150
V
160A
80A
= 320A
I
C
V
CE
V
GE
GE
- Amperes
- Volts
10
= 15V
- Volts
11V
9V
200
2
IXGK320N60B3
IXGX320N60B3
11
T
J
= - 40ºC
12
2.5
250
J
25ºC
8V
7V
6V
5V
= 125ºC
125ºC
13
T
300
J
3
= 25ºC
14
3.5
350
15