IXGT64N60B3 IXYS, IXGT64N60B3 Datasheet - Page 4

• Manufacturer Part Number: IXGT64N60B3
• Description: Mid-Frequency Range (15khz-40khz)
• Manufacturer: IXYS

Specifications of IXGT64N60B3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 88
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.95
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-268

IXYS reserves the right to change limits, test conditions and dimensions.
1.00
0.10
0.01
110
100
220
200
180
160
140
120
100
90
80
70
60
50
40
30
20
10
80
60
40
20
0
0
0.0001
100
0
Fig. 9. Reverse-Bias Safe Operating Area
T
R
dV / dt < 10V / ns
20
J
G
= 125ºC
= 3 Ω
200
40
Fig. 7. Transconductance
60
300
I
C
V
80
- Amperes
CE
0.001
- Volts
100
400
T
J
120
= - 40ºC
125ºC
25ºC
Fig. 11. Maximum Transient Thermal Impedance
140
500
160
180
600
0.01
Pulse Width - Seconds
200
10,000
1,000
100
16
14
12
10
10
8
6
4
2
0
0
0
f
V
I
I
= 1 MHz
C
G
CE
0.1
20
= 50A
= 10 mA
5
= 300V
40
10
Fig. 8. Gate Charge
Fig. 10. Capacitance
60
Q
G
15
- NanoCoulombs
V
80
CE
20
- Volts
100
1
25
IXYS REF: G_64N60B3(75) 4-09-08-A
120
IXGH64N60B3
IXGT64N60B3
C ies
C oes
C res
30
140
35
160
180
40
10