IXGH64N60A3 IXYS, IXGH64N60A3 Datasheet - Page 6
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXGH64N60A3
Manufacturer Part Number
IXGH64N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGH64N60A3.pdf
(6 pages)
Specifications of IXGH64N60A3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
64
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
222
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.0
Rthjc, Max, Igbt, (°c/w)
0.27
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
IXYS reserves the right to change limits, test conditions and dimensions.
120
110
100
160
140
120
100
90
80
70
60
50
40
30
20
10
80
60
40
20
0
20
5
Switching Times vs. Collector Current
Switching Times vs. Gate Resistance
t
T
V
t
R
V
r
J
r
CE
10
G
CE
30
= 125ºC, V
= 3Ω , V
= 480V
= 480V
Fig. 18. Inductive Turn-on
Fig. 20. Inductive Turn-on
15
40
GE
t
t
d(on)
d(on)
GE
20
= 15V
I
= 15V
I
50
C
C
R
- - - -
- - - -
= 50A
- Amperes
G
T
25
- Ohms
J
= 25ºC, 125ºC
60
I
C
30
= 100A
70
35
80
40
45
90
50
100
140
120
100
80
60
40
20
0
34
33
32
31
30
29
28
27
26
25
24
23
22
120
110
100
90
80
70
60
50
40
30
20
25
Switching Times vs. Junction Temperature
t
R
V
35
r
I
I
CE
G
C
C
= 3
= 100A
= 50A
= 480V
Ω
45
Fig. 19. Inductive Turn-on
, V
T
J
t
GE
d(on)
55
- Degrees Centigrade
= 15V
- - - -
65
75
85
95
IXGH64N60A3
IXGT64N60A3
IXYS REF: G_64N60A3(75) 7-02-08-B
105
115
125
40
38
36
34
32
30
28
26
24
22
20