IXGP36N60A3 IXYS, IXGP36N60A3 Datasheet - Page 4

• Manufacturer Part Number: IXGP36N60A3
• Description: Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
• Manufacturer: IXYS

Specifications of IXGP36N60A3

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): -
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 36
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.4
• Tfi, Typ, Tj=25°c, Igbt, (ns): 325
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.30
• Rthjc, Max, Igbt, (°c/w): 0.56
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-220

IXYS reserves the right to change limits, test conditions and dimensions.
1.00
0.10
0.01
80
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0.00001
0
100
0
T
R
dV / dt < 10V / ns
Fig. 19. Reverse-Bias Safe Operating Area
20
J
G
= 125ºC
= 5Ω
200
40
Fig. 7. Transconductance
60
300
0.0001
I
C
80
V
- Amperes
CE
- Volts
100
400
120
500
Fig. 11. Maximum Transient Thermal Impedance
140
T
0.001
J
= - 40ºC
160
125ºC
25ºC
600
180
Pulse Width - Seconds
200
700
0.01
10,000
1,000
100
16
14
12
10
10
8
6
4
2
0
0
0
V
I
I
C
G
CE
f
= 30A
= 10 mA
= 600V
= 1 MHz
10
5
IXGA36N60A3 IXGP36N60A3
0.1
20
10
Fig. 17. Gate Charge
Fig. 18. Capacitance
Q
15
30
G
- NanoCoulombs
V
CE
- Volts
20
40
IXYS REF: G_36N60A3(55) 07-03-08-A
1
IXGH36N60A3
C ies
C oes
25
50
30
60
35
70
10
40
80