IXGR72N60A3 IXYS, IXGR72N60A3 Datasheet - Page 4
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IXGR72N60A3
Manufacturer Part Number
IXGR72N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGR72N60A3.pdf
(6 pages)
Specifications of IXGR72N60A3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
52
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
250
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.5
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS247
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
1.00
0.10
0.01
130
120
110
100
100
90
80
70
60
50
40
30
20
10
0.0001
10
0
0
0
f
20
= 1 MHz
5
40
Fig. 7. Transconductance
10
60
Fig. 9. Capacitance
15
I
C
80
- Amperes
0.001
V
CE
100
20
- Volts
T
J
= - 40ºC
120
Fig. 11. Maximum Transient Thermal Impedance
25
25ºC
140
125ºC
30
C oes
C res
160
C ies
35
0.01
180
Pulse Width - Seconds
40
200
160
140
120
100
80
60
40
20
16
14
12
10
0
8
6
4
2
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
150
20
T
R
dV / dt < 10V / ns
0.1
V
I
I
J
C
G
G
CE
= 125ºC
= 60A
= 10 mA
= 3Ω
= 300V
40
200
60
250
Fig. 8. Gate Charge
80
Q
300
G
V
- NanoCoulombs
100 120 140 160
CE
350
- Volts
IXGR72N60A3
400
1
450
500
180 200 220 240
550
600
650
10