IXGH12N100A IXYS, IXGH12N100A Datasheet
IXGH12N100A
Manufacturer Part Number
IXGH12N100A
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGH12N100A.pdf
(2 pages)
Specifications of IXGH12N100A
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
24
Ic90, Tc=90°c, Igbt, (a)
12
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
4
Tfi, Typ, Tj=25°c, Igbt, (ns)
500
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.2
Rthjc, Max, Igbt, (°c/w)
1.25
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGH12N100AU1
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
Low V
High Speed IGBT
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
C25
C90
CM
CES
GES
J
JM
stg
CGR
C
CES
GES
GEM
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 300 mH
T
Mounting torque (M3)
Test Conditions
I
BV
I
V
V
V
V
I
CE(sat)
C
C
C
C
C
C
C
J
J
GE
GE(th)
CE
GE
CE
CES
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 500 mA, V
= 3 mA, V
= 0.8 V
= 0 V
= 0 V, V
= I
temperature coefficient
temperature coefficient
C90
, V
IGBT
CES
GE
GE
VJ
GE
= 15 V
= 125°C, R
= ±20 V
GE
= 0 V
= V
GE
GE
= 1 MW
G
= 150 W
T
T
J
J
(T
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
12N100A
12N100
2.5
1000
Min.
IXGH 12N100
IXGH 12N100A 1000 V 24 A 4.0 V
-55 ... +150
-55 ... +150
Characteristic Values
@ 0.8 V
0.072
-0.192
I
Maximum Ratings
1.13/10
CM
Typ.
1000
1000
= 24
±20
±30
100
150
300
CES
24
12
48
6
Max.
±100
5.5
250
3.5
4.0
Nm/lb.in.
1
%/K
%/K
mA
mA
nA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
TO-247AD
G = Gate
E = Emitter
Features
•
•
•
•
•
•
Applications
•
•
•
•
•
Advantages
•
•
International standard package
JEDEC TO-247 AD
2nd generation HDMOS
Low V
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Voltage rating guaranteed at high
temperature (125°C)
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 1 screw
(isolated mounting screw hole)
High power density
1000 V 24 A 3.5 V
V
G
CES
CE(sat)
C
E
C
TAB = Collector
I
= Collector
C25
TM
C (TAB)
process
95590B(7/00)
V
CE(sat)
1 - 2
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IXGH12N100A Summary of contents
Page 1
... GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXGH 12N100 IXGH 12N100A 1000 4.0 V Maximum Ratings 1000 = 1 MW 1000 GE ±20 ± 150 W ...
Page 2
... higher T or increased R E CES J off R thJC R thCK IXGH12N100/A characteristic curves may be found in the IXGH12N100U/AU1 data sheet. © 2000 IXYS All rights reserved IXGH12N100 IXGH12N100A Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max 750 0 ...