IXGA12N100U1 IXYS, IXGA12N100U1 Datasheet - Page 4
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IXGA12N100U1
Manufacturer Part Number
IXGA12N100U1
Description
Low-Frequency Range (DC-15khz), Low Vcesat w/ Diode
Manufacturer
IXYS
Datasheet
1.IXGA12N100U1.pdf
(4 pages)
Specifications of IXGA12N100U1
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
24
Ic90, Tc=90°c, Igbt, (a)
12
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
800
Eoff, Typ, Tj=125°c, Igbt, (mj)
10
Rthjc, Max, Igbt, (°c/w)
1.25
If, Tj=110°c, Diode, (a)
12
Rthjc, Max, Diode, (ºc/w)
2.5
Package Style
TO-263 (D2 PAK)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXGA12N100U1
Manufacturer:
IXYS
Quantity:
18 000
© 2000 IXYS All rights reserved
0.001
0.01
1200
1100
1000
0.1
0.00001
900
800
15
12
1
9
6
3
0
0
Figure 7. Dependence of tfi and E
0
D=0.2
D=0.02
D=0.01
D=0.5
D=0.1
D=0.05
Single pulse
T
V
R
I
J
CE
G
C
= 125°C
= 30A
= 120
= 150V
15
Figure 9. Gate Charge
Q
5
g
- nanocoulombs
30
I
C
0.0001
- Amperes
10
45
E
(OFF)
t
fi
Figure 11. Transient Thermal Resistance
15
60
OFF
D = Duty Cycle
0.001
75
Pulse Width - Seconds
on I
20
5
4
3
2
1
C
.
IXGA12N100U1
IXGA12N100AU1
1000
100
0.1
800
600
400
200
10
0.01
1
Figure 8. Dependence of tfi and E
24
0
0
Figure 10. Turn-off Safe Operating Area
0
200
30
E
T
R
dV/dt < 5V/ns
(OFF)
J
G
400
= 125°C
V
60
R
= 4.7
CE
G
0.1
t
- Ohms
fi
- Volts
IXGP12N100U1
IXGP12N100AU1
600
90
T
800
120
I
J
C
= 125°C
= 12A
OFF
on R
1000
150
1
5
4
3
2
1
0
4 - 4
G
.