IXGH12N100U1 IXYS, IXGH12N100U1 Datasheet - Page 4

• Manufacturer Part Number: IXGH12N100U1
• Description: Low-Frequency Range (DC-15khz), Low Vcesat w/ Diode
• Manufacturer: IXYS

Specifications of IXGH12N100U1

• Vces, (v): 1000
• Ic25, Tc=25°c, Igbt, (a): 24
• Ic90, Tc=90°c, Igbt, (a): 12
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 800
• Eoff, Typ, Tj=125°c, Igbt, (mj): 10
• Rthjc, Max, Igbt, (°c/w): 1.25
• If, Tj=110°c, Diode, (a): 12
• Rthjc, Max, Diode, (ºc/w): 2.5
• Package Style: TO-247

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0.001
0.01
Figure 7. Dependence of tfi and E
1200
1100
1000
0.1
0.00001
900
800
15
12
1
9
6
3
0
0
0
D=0.2
D=0.01
D=0.5
D=0.02
D=0.1
D=0.05
Single pulse
T
V
R
I
J
CE
Figure 9. Gate Charge
G
C
= 125°C
= 30A
= 120
= 150V
15


Q
5
g
- nanocoulombs
30
I
C
0.0001
- Amperes
10
45
E
(OFF)
t
fi
15
60
OFF
Figure 11. Transient Thermal Resistance
on I
D = Duty Cycle
0.001
C
75
Pulse Width - Seconds
.
20
5
4
3
2
1
IXGH12N100U1
1000
100
0.1
800
600
400
200
10
0.01
1
24
0
0
Figure 8. Dependence of tfi and E
Figure 10. Turn-off Safe Operating Area
0
200
30
E
T
R
dV/dt < 5V/ns
(OFF)
J
G
400
= 125°C
V
R
60
= 4.7
CE
G
0.1
t
IXGH12N100AU1
- Ohms
fi
- Volts


600
90
T
800
120
I
J
C
= 125°C
= 12A
OFF
1000
150
1
on R
5
4
3
2
1
0
4 - 5
G
.