IXGA20N100A3 IXYS, IXGA20N100A3 Datasheet - Page 3
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IXGA20N100A3
Manufacturer Part Number
IXGA20N100A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGA20N100A3.pdf
(5 pages)
Specifications of IXGA20N100A3
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
20
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
© 2011 IXYS CORPORATION, All Rights Reserved
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
40
35
30
25
20
15
10
40
35
30
25
20
15
10
5
0
5
0
0
0
5
0.5
6
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
7
Fig. 5. Collector-to-Emitter Voltage
1
vs. Gate-to-Emitter Voltage
1
8
1.5
9
V
1.5
V
V
CE
CE
2
V
GE
GE
- Volts
- Volts
10
- Volts
= 15V
V
13V
11V
10V
9V
2.5
GE
I
2
C
= 15V
11
= 40A
13V
11V
10V
9V
20A
10A
3
12
2.5
J
J
= 125ºC
= 25ºC
3.5
13
T
8V
7V
6V
5V
J
= 25ºC
3
6V
5V
4
14
8V
7V
4.5
3.5
15
160
140
120
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
60
50
40
30
20
10
0
0
-50
3.5
0
Fig. 2. Extended Output Characteristics @ T
IXGA20N100A3 IXGP20N100A3
V
4.0
GE
-25
= 15V
4.5
5
Fig. 4. Dependence of V
5.0
0
Fig. 6. Input Admittance
Junction Temperature
5.5
10
T
J
25
- Degrees Centigrade
6.0
V
V
CE
GE
- Volts
6.5
15
50
- Volts
IXGH20N100A3
I
I
I
7.0
C
C
C
T
= 40A
= 10A
= 20A
J
75
V
= - 40ºC
CE(sat)
GE
7.5
20
125ºC
25ºC
= 15V
100
8.0
on
13V
8.5
J
25
11V
= 25ºC
125
10V
9.0
9V
8V
6V
5V
7V
150
9.5
30