IXGP20N100A3 IXYS, IXGP20N100A3 Datasheet - Page 4
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IXGP20N100A3
Manufacturer Part Number
IXGP20N100A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGA20N100A3.pdf
(5 pages)
Specifications of IXGP20N100A3
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
20
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01
0.1
28
24
20
16
12
45
40
35
30
25
20
15
10
0.00001
1
8
4
0
5
0
200
0
T
R
dv / dt < 10V / ns
J
G
= 125ºC
= 50Ω
300
10
Fig. 9. Reverse-Bias Safe Operating Area
400
20
Fig. 7. Transconductance
0.0001
500
30
I
C
V
- Amperes
CE
600
40
- Volts
700
50
Fig. 11. Maximum Transient Thermal Impedance
0.001
T
J
800
60
= - 40ºC
125ºC
25ºC
900
70
Pulse Width - Seconds
1000
80
0.01
10,000
1,000
100
16
14
12
10
10
8
6
4
2
0
0
0
f
V
I
I
IXGA20N100A3 IXGP20N100A3
= 1 MHz
C
G
CE
= 20A
= 10mA
= 500V
5
5
10
0.1
10
Fig. 10. Capacitance
C res
Fig. 8. Gate Charge
15
15
Q
G
C oes
- NanoCoulombs
V
CE
C ies
- Volts
20
20
IXGH20N100A3
25
25
1
30
30
35
35
10
40
40