IXGM25N100A IXYS, IXGM25N100A Datasheet - Page 2
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IXGM25N100A
Manufacturer Part Number
IXGM25N100A
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGM25N100A.pdf
(4 pages)
Specifications of IXGM25N100A
Vces, (v)
1000
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
25
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
4
Tfi, Typ, Tj=25°c, Igbt, (ns)
500
Eoff, Typ, Tj=125°c, Igbt, (mj)
8
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-204
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
off
on
off
ies
thJC
thCK
oes
res
g
ge
gc
Test Conditions
I
Pulse test, t
C
Inductive load, T
I
V
Remarks: Switching times
may increase
for V
higher T
Inductive load, T
I
V
Remarks: Switching times
may increase
for V
higher T
= I
V
I
C
C
C
CE
CE
CE
= I
= I
= I
C90
= 0.8 V
= 0.8 V
= 25 V, V
C90
CE
C90
CE
; V
C90
, V
, V
, V
(Clamp) > 0.8 • V
(Clamp) > 0.8 • V
CE
J
J
or increased R
or increased R
300 s, duty cycle
GE
GE
GE
= 10 V,
CES
CES
= 15 V, L = 300 H,
= 15 V, L = 300 H
= 15 V, V
GE
, R
, R
= 0 V, f = 1 MHz
G
G
J
J
= R
= R
= 25 C
= 125 C
off
off
CE
= 33
G
= 33
G
(T
= 0.5 V
CES
CES
J
,
,
= 25 C, unless otherwise specified)
2 %
25N100A
25N100A
25N100
25N100A
25N100
25N100A
CES
min.
Characteristic Values
8
2750
typ.
0.25
200
130
100
200
500
500
100
250
720
950
800
3.5
4,835,592
4,850,072
15
50
25
55
10
5
8
IXGH 25N100
IXGH 25N100A
max.
1000
3000
1500
0.62 K/W
180
60
90
4,881,106
4,931,844
K/W
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
5,017,508
5,034,796
TO-204AE Outline
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
1 = Gate
2 = Emitter
Case = Collector
5,049,961
5,063,307
IXGM 25N100
IXGM 25N100A
5,187,117
5,237,481
5,486,715
5,381,025