IXGN50N120C3H1 IXYS, IXGN50N120C3H1 Datasheet - Page 4

• Manufacturer Part Number: IXGN50N120C3H1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGN50N120C3H1

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 95
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 64
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.1
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): 58
• Rthjc, Max, Diode, (ºc/w): 0.3
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
60
50
40
30
20
10
10
0.0001
0
0
0
f
10
= 1 MHz
5
20
10
30
Fig. 7. Transconductance
Fig. 9. Capacitance
15
40
0.001
I
V
C
CE
- Amperes
- Volts
50
20
60
25
Fig. 11. Maximum Transient Thermal Impedance
70
T
C ies
C oes
C res
J
30
= - 40ºC
125ºC
25ºC
80
0.01
35
90
Pulse Width - Seconds
100
40
100
80
60
40
20
16
14
12
10
0
8
6
4
2
0
200
0
T
R
dv / dt < 10V / ns
V
I
I
J
G
C
G
20
CE
= 125ºC
0.1
= 2Ω
= 50A
= 10mA
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
400
40
60
Fig. 8. Gate Charge
600
Q
IXGN50N120C3H1
G
80
- NanoCoulombs
V
CE
100
- Volts
800
1
120
140
1000
160
180
1200
10
200