IXGN82N120B3H1 IXYS, IXGN82N120B3H1 Datasheet - Page 5

• Manufacturer Part Number: IXGN82N120B3H1
• Description: Mid-Frequency Range (15khz-40khz), w/ Diode
• Manufacturer: IXYS

Specifications of IXGN82N120B3H1

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 145
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 64
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 100
• Eoff, Typ, Tj=125°c, Igbt, (mj): 7.1
• Rthjc, Max, Igbt, (°c/w): 0.21
• If, Tj=110°c, Diode, (a): 42
• Rthjc, Max, Diode, (ºc/w): 0.42
• Package Style: SOT-227

© 2009 IXYS CORPORATION, All Rights Reserved
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10
9
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6
5
4
3
700
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100
9
8
7
6
5
4
3
2
1
0
25
2
0
20
3
E
R
V
E
T
V
35
25
off
CE
J
G
off
CE
= 125ºC , V
= 2Ω
t
R
V
= 600V
= 600V
f i
CE
G
4
Energy Loss vs. Junction Temperature
Switching Times vs. Collector Current
= 2Ω , V
30
= 600V
45
,
Energy Loss vs. Gate Resistance
V
5
GE
T
35
T
J
Fig. 14. Inductive Switching
Fig. 12. Inductive Switching
J
= 25ºC
GE
Fig. 16. Inductive Turn-off
= 15V
GE
E
55
= 125ºC
T
E
6
on
t
= 15V
J
d(off)
on
= 15V
40
- Degrees Centigrade
- - - -
- - - -
7
- - - -
R
65
I
45
G
C
- Amperes
- Ohms
8
I
50
75
C
= 80A
9
55
85
10
60
I
I
C
I
11
C
95
C
= 40A
= 40A
= 80A
65
12
105
70
13
115
75
14
80
125
15
500
450
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300
250
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150
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2
1
0
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20
0
25
2
25
R
V
t
E
R
V
t
T
V
3
f i
G
CE
Switching Times vs. Junction Temperature
35
off
CE
G
f i
J
CE
= 2Ω , V
= 125ºC,
= 2
I
= 600V
= 600V
30
= 600V
C
Switching Times vs. Gate Resistance
4
Ω ,
= 80A
45
Energy Loss vs. Collector Current
I
35
V
GE
5
C
V
Fig. 13. Inductive Switching
GE
Fig. 15. Inductive Turn-off
Fig. 17. Inductive Turn-off
t
= 40A, 80A
d(off)
GE
= 15V
55
E
= 15V
t
d(off)
T
= 15V
6
on
40
J
- - - -
- Degrees Centigrade
- - - -
I
- - - -
C
65
IXGN82N120B3H1
7
45
- Amperes
R
G
8
- Ohms
75
50
I
C
9
= 40A
85
55
10
60
95
11
65
12
105
13
70
T
115
J
= 125ºC
T
14
J
= 25ºC
75
125
15
340
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300
280
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240
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80
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