IXGH28N140B3H1 IXYS, IXGH28N140B3H1 Datasheet - Page 4
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IXGH28N140B3H1
Manufacturer Part Number
IXGH28N140B3H1
Description
Mid-Frequency Range (15khz-40khz), w/ Diode
Manufacturer
IXYS
Datasheet
1.IXGX28N140B3H1.pdf
(7 pages)
Specifications of IXGH28N140B3H1
Vces, (v)
1400
Ic25, Tc=25°c, Igbt, (a)
60
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
28
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.6
Tfi, Typ, Tj=25°c, Igbt, (ns)
360
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.5
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
15
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
60
50
40
30
20
10
60
50
40
30
20
10
0
8
7
6
5
4
3
2
0
0
5
0
0.5
0.5
6
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
1
7
1
Fig. 5. Collector-to-Emitter Voltage
1.5
vs. Gate-to-Emitter Voltage
1.5
8
2
I
C
9
2
= 56A
28A
14A
V
V
V
2.5
CE
CE
GE
2.5
10
- Volts
- Volts
- Volts
3
11
V
3
V
GE
GE
3.5
= 15V
= 15V
13V
11V
13V
11V
3.5
12
J
4
J
= 125ºC
T
= 25ºC
J
= 25ºC
13
4
4.5
9V
7V
5V
9V
7V
5V
4.5
14
5
5.5
15
5
200
180
160
140
120
100
120
100
1.6
1.4
1.2
1.0
0.8
0.6
IXGH28N140B3H1 IXGK28N140B3H1
80
60
40
20
80
60
40
20
0
0
-50
0
3
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
4
= 15V
5
Fig. 4. Dependence of V
5
0
Fig. 6. Input Admittance
Junction Temperature
T
J
25
6
- Degrees Centigrade
10
V
V
CE
GE
V
- Volts
50
GE
- Volts
7
IXGX28N140B3H1
= 15V
13V
15
75
8
11V
T
CE(sat)
9V
J
7V
5V
I
I
I
C
C
C
= - 40ºC
= 56A
= 28A
= 14A
125ºC
25ºC
100
on
9
20
J
= 25ºC
125
10
25
150
11