IXGR6N170A IXYS, IXGR6N170A Datasheet - Page 3
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IXGR6N170A
Manufacturer Part Number
IXGR6N170A
Description
High Voltage NPT IGBTs (1600V -1700V)
Manufacturer
IXYS
Datasheet
1.IXGR6N170A.pdf
(5 pages)
Specifications of IXGR6N170A
Vces, (v)
1700
Ic25, Tc=25°c, Igbt, (a)
5.5
Vce(sat), Max, Tj=25°c, Igbt, (v)
7
Tfi, Typ, Igbt, (ns)
32
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.25
Rthjc, Max, Igbt, (°c/w)
2.5
Package Style
ISOPLUS247
© 2010 IXYS CORPORATION, All Rights Reserved
12
10
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
8
6
4
0
0
6
Fig. 1. Output Characteristics @ T
Fig. 3. Output Characteristics @ T
8
2
2
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
10
4
4
I
C
V
12
V
V
6
= 12A
CE
CE
GE
6A
3A
- Volts
- Volts
- Volts
6
V
14
GE
V
8
GE
= 15V
= 15V
13V
11V
13V
11V
8
16
10
J
J
= 25ºC
= 125ºC
9V
7V
5V
7V
5V
T
9V
J
= 25ºC
10
18
12
12
20
14
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
24
20
16
12
12
10
8
6
4
2
0
8
4
0
-50
3.5
0
V
Fig. 2. Extended Output Characteristics @ T
GE
= 15V
-25
4.5
5
Fig. 4. Dependence of V
0
T
J
Fig. 6. Input Admittance
= 125ºC
5.5
10
Junction Temperature
- 40ºC
T
25ºC
J
25
- Degrees Centigrade
I
I
I
C
C
C
V
= 12A
=6A
= 3A
V
V
CE
GE
GE
6.5
- Volts
15
50
IXGR6N170A
= 15V
- Volts
75
13V
7.5
CE(sat)
20
11V
9V
100
7V
on
8.5
25
J
= 25ºC
125
150
9.5
30