MMIX1G75N250 IXYS, MMIX1G75N250 Datasheet - Page 2

• Manufacturer Part Number: MMIX1G75N250
• Description: VHV NPT IGBTs (2500V - 4000V)
• Manufacturer: IXYS

Specifications of MMIX1G75N250

• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 110
• Ic110, Tc=110°c, Igbt, (a): 65
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.9
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Tf, Typ, Igbt, (ns): 175455
• Rthjc, Max, Igbt, (k/w): 0.29

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
t
t
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
r
d(off)
f
fs
ies
oes
res
thJC
thCK
g(on)
ge
gc
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Ices measurement.
Test Conditions
I
V
I
Resistive Switching Times
I
V
C
C
C
CE
CE
= 150A, V
= 60A, V
= 75A, V
= 1250V, R
= 25V, V
ADVANCE TECHNICAL INFORMATION
CE
GE
GE
GE
= 10V, Note 1
= 15V, V
= 15V
= 0V, f = 1MHz
G
4,835,592
4,881,106
= 1Ω
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
CES
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
35
Min.
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
9000
Typ.
0.05
410
345
110
175
225
270
455
58
63
55
0.29 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
MMIX1G75N250
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2