IXGF20N300 IXYS, IXGF20N300 Datasheet - Page 2
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IXGF20N300
Manufacturer Part Number
IXGF20N300
Description
VHV NPT IGBTs (2500V - 4000V)
Manufacturer
IXYS
Datasheet
1.IXGF20N300.pdf
(5 pages)
Specifications of IXGF20N300
Vces, (v)
3000
Ic25, Tc=25°c, Igbt, (a)
22
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.2
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Tf, Typ, Igbt, (ns)
210
Rthjc, Max, Igbt, (k/w)
1.25
Package Style
ISOPLUS i4-Pak
Symbol
(T
g
I
C
C
C
Q
Q
Q
t
t
t
t
R
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
C(ON)
d(on)
r
d(off)
f
fs
ies
oes
res
thJC
thCS
thJA
g
ge
gc
J
= 25°C, Unless Otherwise Specified)
1.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t < 300μs, duty cycle, d < 2%.
Test Conditions
I
V
V
I
Resistive Switching Times
I
V
C
C
C
CE
GE
CE
= 20A, V
= 20A, V
= 20A, V
= 960V, R
= 20V, V
= 25V, V
GE
CE
GE
GE
CE
= 10V, Note 1
= 15V
= 15V, V
G
= 20V, Note 1
= 0V, f = 1MHz
= 10Ω
4,835,592
4,881,106
CE
= 600V
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Min.
8
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
1125
0.15
Typ.
180
486
145
210
5.8
12
48
16
31
12
38
30
1.25 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS i4-Pak
6,727,585
6,771,478 B2 7,071,537
IXGF20N300
7,005,734 B2
7,063,975 B2
TM
Pin 1 = Gate
Pin 2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
(HV) Outline
7,157,338B2