IXGF36N300 IXYS, IXGF36N300 Datasheet - Page 2

• Manufacturer Part Number: IXGF36N300
• Description: VHV NPT IGBTs (2500V - 4000V)
• Manufacturer: IXYS

Specifications of IXGF36N300

• Vces, (v): 3000
• Ic25, Tc=25°c, Igbt, (a): 36
• Ic110, Tc=110°c, Igbt, (a): 18
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Tf, Typ, Igbt, (ns): 540
• Rthjc, Max, Igbt, (k/w): 0.78
• Package Style: ISOPLUS i4-Pak

Symbol
(T
g
I
C
C
C
Q
Q
Q
t
t
t
t
R
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
C(ON)
d(on)
r
d(off)
f
fs
ies
oes
res
thJC
thCS
thJA
g
ge
gc
J
= 25°C, Unless Otherwise Specified)
1.
2. Device must be heatsunk for high-temperature leakage current
measurements to avoid thermal runaway.
Pulse test, t < 300μs, duty cycle, d < 2%.
Test Conditions
I
V
V
I
Resistive Switching Times
I
V
C
C
C
CE
GE
CE
= 36A, V
= 36A, V
= 30A, V
= 1500V, R
= 15V, V
= 25V, V
GE
CE
GE
GE
CE
= 10V, Note 1
= 15V
= 15V, V
= 20V, Note 1
= 0V, f = 1MHz
G
4,835,592
4,881,106
= 2Ω
CE
= 600V
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
15
6,162,665
6,259,123 B1
6,306,728 B1
2690
Typ.
0.15
360
136
123
185
215
540
25
34
21
52
36
30
0.78 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
ISOPLUS i4-Pak
6,727,585
6,771,478 B2 7,071,537
IXGF36N300
7,005,734 B2
7,063,975 B2
TM
Pin 1 = Gate
Pin 2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
(HV) Outline
7,157,338B2