IXCK36N250 IXYS, IXCK36N250 Datasheet - Page 4

• Manufacturer Part Number: IXCK36N250
• Description: VHV (2500V-3000V)
• Manufacturer: IXYS

Specifications of IXCK36N250

• Vces, (v): 2500
• Ic25, Tc=25°c, (a): 73
• Ic90, Tc=90°c, (a): -
• Ic110, Tc=110°c, (a): 36
• Vce(sat), Typ, Tj=25°c, (v): 3.3
• Tf Typ, Tj=25°c, (ns): 880
• Tfi Typ, Tj=25°c, (ns): -
• Gate Drive, (v): -
• Rthjc, Max, (k/w): 0.21
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
160
140
120
100
60
50
40
30
20
10
80
60
40
20
16
14
12
10
0
8
6
4
2
0
0
250
0
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
CE
J
G
500
20
= 36A
= 10mA
= 125ºC
= 20Ω
= 1000V
20
Fig. 11. Reverse-Bias Safe Operating Area
750
40
40
Fig. 7. Transconductance
1000
60
Fig. 9. Gate Charge
Q
G
- NanoCoulombs
60
I
1250
V
C
80
CE
- Amperes
- Volts
1500
100
80
1750
120
100
T
125ºC
2000
J
140
= - 40ºC
25ºC
120
2250
160
2500
140
180
10,000
1,000
0.0001
0.001
140
120
100
100
0.01
10
80
60
40
20
0.1
0
0.00001
1
0
0
f
= 1 MHz
Fig. 12. Maximum Transient Thermal Impedance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
5
0.0001
0.5
10
0.001
1
Fig. 10. Capacitance
Pulse Width - Seconds
15
V
V
CE
F
- Volts
1.5
- Volts
0.01
20
T
J
= 25ºC
25
0.1
2
IXCH36N250
IXCK36N250
C ies
C oes
C res
30
2.5
1
T
35
J
= 125ºC
40
10
3