MIXA10W1200TMH IXYS, MIXA10W1200TMH Datasheet - Page 6

• Manufacturer Part Number: MIXA10W1200TMH
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA10W1200TMH

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 12
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 1.1
• Eoff, Typ, 125°c (mj): 1.1
• Rthjc, Typ, Igbt (k/w): 2.0
• Ic80, Fwd, (a): 13
• Rthjc, Fwd, (k/w): 2.4
• Package Style: Mini-Pack 2

I
[A]
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[A]
[mJ]
E
RR
I
F
rec
0.6
0.5
0.4
0.3
0.2
0.1
24
20
16
12
20
15
10
8
4
0
5
0
200
200
0.0
Fig. 11 Typ. recovery energy E
Fig. 9 Typical peak reverse current
i F
T
V
. g
VJ
R
7
= 125°C
= 600 V
250
250
0.5
I
RR
T
T
T
VJ
VJ
y
versus di
p
= 125°C
= 25°C
f .
300
300
1.0
r o
w
di
di
T
V
a
F
F
VJ
R
d r
/dt [A/µs]
/dt [A/µs]
V
F
= 125°C
350
= 600 V
350
1.5
/dt (125°C)
F
c
[V]
h
a
a r
400
c
400
2.0
e t
i r
i t s
rec
s c
450
450
2.5
vs. di
10 A
20 A
20 A
10 A
5 A
5 A
F
500
500
/dt (125°C)
3.0
[K/W]
Z
[ns]
t
thJC
rr
[µC]
Q
rr
500
400
300
200
100
0.1
2.4
2.0
1.6
1.2
0.8
0.4
0.0
10
0.001
1
0
200
200
Fig. 12 Transient thermal impedance
Fig. 10 Typ. recovery time t
i F
. g
8
250
250
Q
T
rr
0.01
y
p
versus. di
c i
300
300
l a
e r
MIXA10W1200TMH
di
di
1 0.446 0.0015 0.8
2 0.415 0.03
3 0.672 0.03
4 0.467 0.08
v
F
20 A
10 A
F
e
5 A
/dt [A/µs]
t
/dt [A/µs]
s r
350
0.1
p
350
F
/dt (125°C)
R
e
[s]
i
IGBT
e r
c
400
o
400
t
v
i
rr
e
vs. di/dt (125°C)
y r
T
V
T
V
1
VJ
VJ
R
R
0.58 0.03
0.98 0.03
0.04 0.08
c
= 125°C
R
= 125°C
= 600 V
450
= 600 V
450
h
i
FRD
a
Diode
20 A
g r
10 A
5 A
0.002
IGBT
e
t
20110322b
i
500
500
10
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