MIXA30W1200TML IXYS, MIXA30W1200TML Datasheet - Page 5

• Manufacturer Part Number: MIXA30W1200TML
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA30W1200TML

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 30
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 2.5
• Eoff, Typ, 125°c (mj): 3.0
• Rthjc, Typ, Igbt (k/w): 0.84
• Ic80, Fwd, (a): 29
• Rthjc, Fwd, (k/w): 1.2
• Package Style: E1-Pack

[A]
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[A]
[mJ]
I
I
C
C
E
IGBT T1 - T6
50
40
30
20
10
50
40
30
20
10
0
0
6
5
4
3
2
1
0
0
5
Fig. 3 Typ. tranfer characteristics
0
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
VJ
CE
GE
G
6
=
= 15 V
= 125°C
= 600 V
= ±15 V
10
T
VJ
39 Ω
= 125°C
7
1
T
VJ
20
8
= 25°C
V
T
V
CE
VJ
I
GE
C
= 25°C
9
[V]
[A]
30
[V]
2
10
T
VJ
= 125°C
40
11
E
on
3
12
E
50
off
13
[mJ]
V
[V]
E
[A]
GE
I
C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
0
5
0
20
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
I
V
VJ
E
C
E
CE
on
= 125°C
off
40
= 25 A
= 600 V
20
1
V
GE
60
MIXA30W1200TML
= 15 V
17 V
19 V
I
V
V
T
40
C
2
80
VJ
CE
GE
Q
=
G
= 125°C
= 600 V
R
= ±15 V
V
G
CE
[nC]
100 120 140 160
25 A
[Ω ]
60
[V]
3
13 V
80
4
20110118b
11 V
9 V
5 - 6
100
5