MIXA40W1200TMH IXYS, MIXA40W1200TMH Datasheet - Page 5

• Manufacturer Part Number: MIXA40W1200TMH
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA40W1200TMH

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 40
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 3.8
• Eoff, Typ, 125°c (mj): 4.1
• Rthjc, Typ, Igbt (k/w): 0.64
• Ic80, Fwd, (a): 29
• Rthjc, Fwd, (k/w): 1.2
• Package Style: Mini-Pack2

[A]
[A]
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[mJ]
I
I
C
C
E
IGBT T1 - T6
70
60
50
40
30
20
10
70
60
50
40
30
20
10
10
0
0
8
6
4
2
0
0
5
0
Fig. 3 Typ. tranfer characteristics
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
VJ
G
CE
GE
T
6
= 15 V
VJ
=
= 125°C
= 600 V
= ±15 V
= 125°C
27 Ω
20
7
1
T
VJ
8
= 25°C
V
T
V
CE
VJ
I
GE
C
= 25°C
40
9
[V]
[A]
[V]
2
T
10
VJ
= 125°C
11
60
3
12
E
E
on
off
13
80
[mJ]
V
[V]
E
[A]
GE
I
C
70
60
50
40
30
20
10
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
6
5
4
3
0
5
0
20
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
I
V
V
T
VJ
C
I
V
CE
GE
VJ
C
= 125°C
=
CE
20
= 125°C
= 600 V
= ±15 V
= 35 A
= 600 V
1
35 A
V
MIXA40W1200TMH
40
GE
40
= 15 V
17 V
19 V
2
60
V
R
Q
CE
G
G
[Ω ]
[V]
[nC]
80
3
60
100 120 140
13 V
4
E
E
on
off
20101117c
11 V
9 V
5 - 6
80
5