MIXA40W1200TML IXYS, MIXA40W1200TML Datasheet - Page 6

• Manufacturer Part Number: MIXA40W1200TML
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA40W1200TML

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 40
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 3.8
• Eoff, Typ, 125°c (mj): 4.1
• Rthjc, Typ, Igbt (k/w): 0.64
• Ic80, Fwd, (a): 29
• Rthjc, Fwd, (k/w): 1.2

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
I
[A]
[mJ]
[A]
E
RR
I
Diode D1 - D6
F
rec
2.0
1.6
1.2
0.8
0.4
0.0
60
50
40
30
20
10
70
60
50
40
30
20
10
0
0
300
300
0.0
Fig. 11 Typ. recovery energy E
Fig. 9 Typ. peak reverse current I
Fig. 7 Typ. Forward current versus V
T
V
T
V
400
400
VJ
R
VJ
R
0.5
= 125°C
= 600 V
= 125°C
= 600 V
T
T
VJ
VJ
500
500
= 125°C
= 25°C
1.0
600
600
di
di
F
F
V
/dt [A/µs]
/dt [A/µs]
F
700
700
1.5
[V]
800
800
2.0
900 1000 1100
900 1000 1100
rec
2.5
RM
versus di/dt
vs. di/dt
60 A
30 A
15 A
60 A
30 A
15 A
F
3.0
[ns]
[K/W]
Z
t
rr
thJC
[µC]
Q
rr
0.01
700
600
500
400
300
200
100
0.1
10
0.001
7
6
5
4
3
2
1
0
1
300
300
Fig. 12 Typ. transient thermal impedance
Fig. 8 Typ. reverse recov.charge Q
Fig. 10 Typ. recovery time t
400
400
T
V
VJ
R
= 125°C
0.01
= 600 V
500
500
1 0.152 0.0025 0.341 0.0025
2 0.072 0.03
3 0.308 0.03
4 0.108 0.08
600
600
di
di
MIXA40W1200TML
F
F
R
/dt [A/µs]
t
/dt [A/µs]
i
700
700
p
0.1
IGBT
[s]
800
800
t
i
rr
T
V
0.217 0.03
0.348 0.03
0.294 0.08
versus di/dt
900 1000 1100
900 1000 1100
VJ
R
1
R
= 125°C
= 600 V
i
FRD
Diode
rr
IGBT
vs. di/dt
60 A
30 A
15 A
60 A
30 A
15 A
t
i
20110118b
10
6 - 6