MIXA80W1200TEH IXYS, MIXA80W1200TEH Datasheet - Page 6

• Manufacturer Part Number: MIXA80W1200TEH
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA80W1200TEH

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 84
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 6.8
• Eoff, Typ, 125°c (mj): 8.3
• Rthjc, Typ, Igbt (k/w): 0.32
• Ic80, Fwd, (a): 90
• Rthjc, Fwd, (k/w): 0.4
• Package Style: E3-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
I
[A]
[mJ]
[A]
Inverter D1 - D6
E
RR
I
F
rec
200
150
100
160
140
120
100
50
80
60
40
1000
1000
0
8
6
4
2
0
0.0
Fig. 11 Typ. recovery energy E
Fig. 9 Typ. peak reverse current I
Fig. 7 Typ. Forward current versus V
T
V
T
V
VJ
VJ
R
R
= 125°C
1200
= 125°C
1200
= 600 V
= 600 V
0.5
T
T
VJ
VJ
= 125°C
= 25°C
1400
1400
1.0
di
di
F
F
V
/dt [A/µs]
/dt [A/µs]
1600
1600
F
1.5
[V]
1800
1800
2.0
rec
RM
versus di/dt
2000
2000
vs. di/dt
2.5
F
200 A
100 A
50 A
200 A
100 A
50 A
2200
2200
3.0
[K/W]
[ns]
Z
t
rr
thJC
[µC]
Q
rr
0.01
700
600
500
400
300
200
100
0.1
24
20
16
12
0.001
1000
1000
8
4
0
1
Fig. 8 Typ. reverse recov.charge Q
Fig. 10 Typ. recovery time t
Fig. 12 Typ. transient thermal impedance
1200
1200
T
V
VJ
R
= 125°C
0.01
= 600 V
MIXA80W1200TEH
1400
1400
1 0.072 0.002 0.092 0.002
2 0.037 0.03
3 0.156 0.03
4 0.055 0.08
di
di
F
F
R
t
/dt [A/µs]
1600
/dt [A/µs]
1600
p
i
0.1
IGBT
[s]
t
rr
i
1800
1800
versus di/dt
T
V
VJ
R
0.067 0.03
0.155 0.03
0.086 0.08
= 125°C
= 600 V
1
R
rr
i
2000
2000
FRD
vs. di/dt
200 A
100 A
50 A
200 A
100 A
50 A
Diode
IGBT
t
20100924a
i
2200
2200
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