MIXA80W1200TED IXYS, MIXA80W1200TED Datasheet - Page 5

• Manufacturer Part Number: MIXA80W1200TED
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA80W1200TED

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 84
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 6.8
• Eoff, Typ, 125°c (mj): 8.3
• Rthjc, Typ, Igbt (k/w): 0.32
• Ic80, Fwd, (a): 90
• Rthjc, Fwd, (k/w): 0.4
• Package Style: E2-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[A]
[A]
[mJ]
Transistor T1 - T6
I
I
C
C
E
140
120
100
140
120
100
80
60
40
20
80
60
40
20
16
14
12
10
0
0
8
6
4
2
0
0.0
5
Fig. 3 Typ. tranfer characteristics
0
Fig. 1 Typ. output characteristics
Fig. 5 Typ. switching energy vs. collector current
E
off
V
R
V
V
T
GE
T
CE
GE
VJ
20
G
0.5
6
VJ
= 15 V
=
= 125°C
= 600 V
= ±15 V
E
= 125°C
on
10 Ω
40
7
1.0
T
VJ
60
8
V
= 25°C
V
GE
1.5
T
VJ
CE
I
C
= 25°C
[V]
80
9
[V]
[A]
2.0
T
VJ
100
10
= 125°C
2.5
120
11
3.0
140
12
160
3.5
13
[mJ]
V
[V]
E
[A]
GE
I
C
140
120
100
80
60
40
20
20
15
10
10
Fig. 6 Typ. switching energy vs. gate resistance
0
5
0
9
8
7
6
5
0.0
8
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
I
V
C
T
E
E
CE
VJ
0.5
off
on
10
= 125°C
= 75 A
= 600 V
50
1.0
12
MIXA80W1200TED
V
GE
100
1.5
= 15 V
17 V
19 V
14
R
Q
2.0
G
V
G
CE
150
16
[Ω]
[nC]
2.5
[V]
I
V
V
T
C
18
VJ
CE
GE
200
=
3.0
= 125°C
= 600 V
= ±15 V
13 V
20
75 A
3.5
250
22
4.0
20100827d
11 V
9 V
5 - 7
300
4.5
24