MIXA100W1200TEH IXYS, MIXA100W1200TEH Datasheet - Page 5

• Manufacturer Part Number: MIXA100W1200TEH
• Description: 1200V XPT Modules
• Manufacturer: IXYS

Specifications of MIXA100W1200TEH

• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 108
• Vce(sat), Typ, Tj 25°c (v): 1.8
• Eon, Typ, 125°c (mj): 8.5
• Eoff, Typ, 125°c (mj): 11
• Rthjc, Typ, Igbt (k/w): 0.25
• Ic80, Fwd, (a): 90
• Rthjc, Fwd, (k/w): 0.4
• Package Style: E3-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[A]
[A]
[mJ]
Transistor T1 - T6
I
I
C
C
E
200
150
100
200
180
160
140
120
100
50
80
60
40
20
20
18
16
14
12
10
0
0
8
6
4
2
0
0
5
Fig. 3 Typ. tranfer characteristics
0
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
CE
GE
VJ
G
E
T
6
= 15 V
= 6.8 Ω
= 125°C
VJ
off
= 600 V
= ±15 V
40
= 125°C
7
E
1
T
on
VJ
80
8
= 25°C
V
T
V
CE
VJ
I
GE
C
= 25°C
9
[V]
[A]
120
[V]
2
T
10
VJ
= 125°C
160
11
3
12
200
13
[mJ]
V
[V]
E
[A]
GE
I
C
Fig. 6 Typ. switching energy vs. gate resistance
200
150
100
50
20
15
10
16
14
12
10
0
5
0
8
6
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
I
V
V
T
C
T
VJ
CE
GE
VJ
=
= 125°C
I
V
= 600 V
= ±15 V
= 125°C
MIXA100W1200TEH
C
CE
100 A
4
1
= 100 A
= 600 V
100
V
E
E
GE
on
off
= 15 V
8
17 V
19 V
R
2
Q
V
G
200
G
12
CE
[Ω]
[nC]
[V]
16
3
300
13 V
20
4
20110505a
11 V
9 V
5 - 6
400
24