MIXA150W1200TEH IXYS, MIXA150W1200TEH Datasheet - Page 5
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MIXA150W1200TEH
Manufacturer Part Number
MIXA150W1200TEH
Description
1200V XPT Modules
Manufacturer
IXYS
Datasheet
1.MIXA150W1200TEH.pdf
(6 pages)
Specifications of MIXA150W1200TEH
Vces, Igbt, (v)
1200
Ic80, Igbt, (a)
150
Vce(sat), Typ, Tj 25°c (v)
1.8
Eon, Typ, 125°c (mj)
14
Eoff, Typ, 125°c (mj)
16
Rthjc, Typ, Igbt (k/w)
0.18
Ic80, Fwd, (a)
130
Rthjc, Fwd, (k/w)
0.28
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[A]
[A]
[mJ]
Transistor T1 - T6
I
I
C
C
E
300
250
200
150
100
300
250
200
150
100
50
50
35
30
25
20
15
10
0
0
5
0
0
5
Fig. 3 Typ. tranfer characteristics
0
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
E
CE
GE
VJ
G
6
off
= 15 V
= 4.7 Ω
= 125°C
T
50
= 600 V
= ±15 V
VJ
= 125°C
7
1
T
100
VJ
= 25°C
8
E
V
rec
V
T
CE
I
VJ
GE
C
150
9
= 25°C
[V]
[A]
E
[V]
on
2
T
10
VJ
200
= 125°C
11
250
3
12
300
13
[mJ]
V
[V]
E
[A]
GE
I
C
Fig. 6 Typ. switching energy vs. gate resistance
300
250
200
150
100
50
20
15
10
22
20
18
16
14
12
10
0
5
0
0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
VJ
I
V
2
= 125°C
MIXA150W1200TEH
C
100
CE
1
= 150 A
= 600 V
V
4
E
E
GE
on
off
200
= 15 V
17 V
19 V
6
R
2
Q
V
G
300
G
CE
8
[Ω]
[nC]
[V]
10
400
3
I
V
V
T
C
VJ
CE
GE
12
=
= 125°C
= 600 V
= ±15 V
13 V
500
150 A
14
4
20110510b
11 V
9 V
5 - 6
600
16