MWI35-12T7T IXYS, MWI35-12T7T Datasheet - Page 6

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MWI35-12T7T

Manufacturer Part Number
MWI35-12T7T
Description
Six-Pack IGBT Modules in E1, E2 and E3-Pack
Manufacturer
IXYS
Datasheet

Specifications of MWI35-12T7T

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
60
Ic80, Tc = 80°c, Igbt, (a)
40
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.7
Eoff, Typ, Tj = 125°c, Igbt, (mj)
3.8
Rthjc, Max, Igbt, (k/w)
0.62
If25, Tc = 25°c, Diode, (a)
44
If80, Tc = 80°c, Diode, (a)
29
Package Style
E2
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
7.5
6.5
5.5
4.5
3.5
2.5
1.5
0.5
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
0
0
Ic = 35A, Vce = 600V
Rg = 27 W , Vce = 600V, Vge = +/-15V, Tvj = 125°C
Typ. switching energy vs. collector current
Typ. turn-on gate charge
20
5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
40
Eon
Eoff
Erec
60
80 100 120 140 160 180 200 220 240 260
Qg [nC]
Ic, If [A]
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
5.5
4.5
3.5
2.5
1.5
0.5
800
6
5
4
3
2
1
0
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90
If = 35A, Vce = 600V, Vge = +/-15V, Tvj = 125°C
Ic, If = 35A, Vce = 600V, Vge = +/-15V, Tvj = 125°C
Typ. switching energy vs. gate resistance
Reverse recovery characteristics
82W
900
82W
Irr
trr
Eon
Eoff
Erec
1000 1100
56W
56W
dif/dt [A/µs]
1200 1300 1400 1500 1600
Rg [ W ]
MWI 35-12T7T
27W
27W
450
440
430
420
410
400
390
380
370
360
350
340
330
320
310
300
290
280
270
260
250
240
230
220
210
200
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