MIEB101W1200EH IXYS, MIEB101W1200EH Datasheet - Page 7

• Manufacturer Part Number: MIEB101W1200EH
• Description: Six-Pack IGBT Modules in E1, E2 and E3-Pack
• Manufacturer: IXYS

Specifications of MIEB101W1200EH

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 183
• Ic80, Tc = 80°c, Igbt, (a): 128
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.8
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 9.7
• Rthjc, Max, Igbt, (k/w): 0.2
• If25, Tc = 25°c, Diode, (a): 170
• If80, Tc = 80°c, Diode, (a): 110

IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
[A]
[A]
I
I
Diode D1 - D6
F
rr
300
250
200
150
100
200
175
150
125
100
50
75
50
25
0
0
0.0
0
Fig. 11 Typ. reverse recovery characteristics
Fig. 9 Typ. forward characteristics
R
V
T
I
rr
VJ
g
r
25
=
0.5
=
= 125°C
600 V
10 Ω
50
1.0
75
1.5
V
F
100 125 150 175 200 225
I
[V]
F
2.0
[A]
T
VJ
2.5
= 25°C
T
3.0
VJ
= 125°C
3.5
Q
rr
4.0
40
30
20
10
0
[µC]
Q
rr
[K/W]
Z
[A]
I
thJC
rr
300
250
200
150
100
0.5
0.4
0.3
0.2
0.1
0.0
50
0.001
1000
0
Fig. 10 Typ. reverse recovery characteristics
Fig. 12 Typ. transient thermal impedance
I
V
T
R
F
r
VJ
G
I
=
33 Ω
rr
Fig. 13 Thermal coefficients
=
=
= 125°C
0.003 0.00001
0.010 0.0014
0.057 0.021
0.130 0.1
33 Ω
600 V
100 A
R
1500
0.01
i
IGBT
22 Ω
22 Ω
τ
di
MIEB 101W1200EH
i
F
t
/dt [A/µs]
2000
p
0.1
[s]
0.015
0.04
0.09
0.255 0.125
R
10 Ω
10 Ω
i
FRD
2500
0.0005
0.006
0.025
1
τ
i
Diode
IGBT
t
rr
3.3
Ω
3000
10
600
500
400
300
200
100
0
20110511a
[ns]
7 - 8
t
rr