DPG10P400PJ IXYS, DPG10P400PJ Datasheet - Page 4

• Manufacturer Part Number: DPG10P400PJ
• Manufacturer: IXYS

Specifications of DPG10P400PJ

• Vrrm, (v): 400
• Ifavm, D = 0.5, Total, (a): 10
• Ifavm, D = 0.5, Per Diode, (a): 10
• @ Tc, (°c): 145
• Ifrms, (a): 35
• Ifsm, 10 Ms, Tvj=45°c, (a): 130
• Vf, Max, Tvj =150°c, (v): 1.03
• @ If, (a): 10
• Trr, Typ, Tvj =25°c, (ns): 45
• Irm , Typ, Tvj =100°c, (a): 5.5
• @ -di/dt, (a/µs): 200
• Tvjm, (°c): 175
• Rthjc, Max, (k/w): 2.50
• Package Style: ISOPLUS220

IXYS reserves the right to change limits, conditions and dimensions.
©
[A]
E
[µJ]
K
I
F
2010 IXYS all rights reserved
rec
f
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
25
20
15
10
0
5
0
0.0
0
0
Fig. 4 Dynamic parameters
Fig. 7 Typ. recovery energy
Fig. 1 Forward current I
I
Q
T
RM
VJ
rr
T
V
100 200 300 400 500 600
VJ
R
= 25°C
0.5
I
I
I
150°C
= 125°C
= 270 V
Q
F
F
F
E
40
= 30 A
= 15 A
= 7.5 A
rec
rr
, I
-di
versus -di
RM
1.0
F
T
/dt [A/µs]
V
versus T
VJ
80
F
[°C]
[V]
1.5
F
/dt
VJ
120
F
2.0
vs. V
F
160
2.5
[µC]
[K/W]
Z
Q
[ns]
t
thJC
rr
rr
120
100
0.4
0.3
0.2
0.1
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
Fig. 5 Typ. recovery time t
0
0
Fig. 2 Typ. reverse recovery charge
1
Fig. 8 Transient thermal resistance junction to case
T
V
VJ
100 200 300 400 500 600
R
100 200 300 400 500 600
= 125°C
= 270 V
Q
rr
Data according to IEC 60747and per diode unless otherwise specified
versus -di
-di
-di
F
/dt [A/µs]
F
/dt [A/µs]
T
V
10
F
VJ
R
/dt
= 125°C
= 270 V
I
F
rr
= 30 A
vs. -di
7.5 A
15 A
7.5 A
15 A
30 A
F
/dt
t [ms]
100
V
I
[A]
V]
RM
FR
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0
0
Fig. 6 Typ. peak forward voltage
Fig. 3 Typ. peak reverse current
V
DPG 10 P 400 PJ
FR
100 200 300 400 500 600
100 200 300 400 500 600
I
I
I
V
F
F
F
I
RM
FR
= 30 A
= 15 A
= 7.5 A
T
V
I
VJ
F
R
-di
versus -di
and t
1000
-di
= 270 V
= 125°C
= 15 A
F
F
/dt [A/µs]
/dt [A/µs]
fr
versus di
T
V
VJ
R
F
/dt
= 125°C
= 270 V
F
/dt
10000
t
fr
20100212a
450
400
350
300
250
200
150
100
50
0
[ns]
t
fr