DSA60C150PB IXYS, DSA60C150PB Datasheet - Page 4

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DSA60C150PB

Manufacturer Part Number
DSA60C150PB
Description
Manufacturer
IXYS
Datasheet

Specifications of DSA60C150PB

Vrrm, (v)
150
Ifavm, D = 0.5, Total, (a)
60
Ifavm, D = 0.5, Per Diode, (a)
30
@ Tc, (°c)
150
Vf, Max, Tvj =125°c, (v)
0.80
@ If, (a)
30
Tvjm, (°c)
175
Rthjc, Max, (k/w)
0.85
Package Style
TO-220A´B
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
I
[A]
[K/W]
F(AV)
I
Z
[A]
F
thJC
0.01
100
0.1
10
70
60
50
40
30
20
10
0.001
0
1
1
0.0
0
Fig. 1 Maximum forward voltage
Fig. 4 Average forward current
Fig. 6 Transient thermal impedance junction to case at various duty cycles
0.2
40
I
drop characteristics
F(AV)
0.4
V
vs. case temperature T
80
T
F
0.6
C
d = 0.5
[V]
[°C]
0.01
120
0.8
T
175°C
125°C
VJ
25°C
1.0
DC
=
160
1.2
t [s]
0.1
C
[mA]
P
I
[W]
R
0.0001
(AV)
0.001
0.01
0.1
60
50
40
30
20
10
10
1
0
0
0
Fig. 5 Forward power loss
150°C
125°C
100°C
Fig. 2 Typ. reverse current
25°C
T
75°C
50°C
VJ
=175°C
10
Data according to IEC 60747and per diode unless otherwise specified
characteristics
I
R
20
50
1
vs. reverse voltage V
I
F(AV)
V
R
30
[V]
[A]
100
40
50
d =
DC
0.5
0.33
0.25
0.17
0.08
10
150
60
R
[pF]
C
1000
T
100
10
DSA 60 C 150 PB
1
2
3
4
5
i
0
Fig. 3 Typ. junction capacitance
R
0.02326
0.1539
0.2031
0.3892
0.08053
thi
[K/W]
C
T
50
vs. reverse voltage V
V
0.0005
1.5
0.011
0.072
0.34
R
t
i
[V]
[s]
100
T
VJ
= 25°C
20110520b
150
R

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