DMA150E1600NA IXYS, DMA150E1600NA Datasheet
DMA150E1600NA
Manufacturer Part Number
DMA150E1600NA
Description
Rectifier (Standard) Diodes
Manufacturer
IXYS
Datasheet
1.DMA150E1600NA.pdf
(3 pages)
Specifications of DMA150E1600NA
Vrrm, (v)
1600
Ifavm, Total, (a)
150
Ifavm, Per Diode, (a)
150
@ Tc, (°c)
90
Prsm, (kw)
-
Ifrms, (a)
150
Ifsm, 10 Ms, Tvj = 45°c, (a)
3000
Vt0, (v)
0.83
Rt, (mohms)
2.0
Tvjm, (°c)
150
Rthjc, Max, (k/w)
0.25
Rthch, (k/w)
0.10
Package Style
SOT-227B (minibloc)
Standard Rectifier
Single Diode
Part number
DMA 150 E 1600 NA
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Symbol
V
V
V
r
T
P
I
I²t
C
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
I
I
R
Features / Advantages:
R
FAV
FSM
F
RRM
F0
VJ
tot
F
thJC
J
average forward current
Definition
max. repetitive reverse voltage
reverse current
forward voltage
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
value for fusing
junction capacitance
for power loss calculation only
Applications:
● Diode for main rectification
● For single and three phase
Conditions
V =
V =
I =
I =
I =
I =
rectangular
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V =
F
F
F
F
R
R
R
bridge configurations
1600
1600
150
300
150
300
400
Data according to IEC 60747and per diode unless otherwise specified
1
2
A
A
A
A
V
V
V; f = 1 MHz
d =
0.5
3
4
T
T
T
T
T
T
T
T
T
V
T
V
T
V
T
V
T
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
R
VJ
R
VJ
R
VJ
R
VJ
DMA 150 E 1600 NA
= 25°C
= 25°C
=
= 25°C
=
=
=
= 25°C
=
=
=
=
= 25°C
= 0 V
= 0 V
= 0 V
= 0 V
150
125
150
150
150
90
45
45
● Housing:
●rIndustry standard outline
●rCu base plate internal DCB isolated
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
V
I
V
Package:
°C
°C
°C
°C
°C
°C
°C
°C
FAV
RRM
F
min.
=
=
=
-40
R a t i n g s
SOT-227B (minibloc)
1600
typ.
1.13 V
150
60
Backside: Isolated
max.
1600
1.23
1.47
1.13
1.43
0.83
0.25 K/W
V
A
3.00
3.24
2.55
2.76
45.0
43.7
32.5
31.6
200
150
150
500
3.5
tentative
2
20100318
kA²s
kA²s
kA²s
kA²s
Unit
mΩ
mA
µA
kA
kA
kA
kA
pF
°C
W
V
V
V
V
V
A
V
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DMA150E1600NA Summary of contents
Page 1
... I max. forward surge current FSM I²t value for fusing C junction capacitance J IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Applications: ● Diode for main rectification ● For single and three phase ...
Page 2
... IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Conditions per pin second minute Part Name Marking on Product DMA150E1600NA Data according to IEC 60747and per diode unless otherwise specified DMA 150 E 1600 NA Ratings min. typ. 0.10 - ...
Page 3
... Outlines SOT-227B (minibloc Nut M4 DIN 934 Lens Head Screw M4x8 DIN 7985 IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved DMA 150 E 1600 Data according to IEC 60747and per diode unless otherwise specified ...