DLA100B1200LB IXYS, DLA100B1200LB Datasheet - Page 4

• Manufacturer Part Number: DLA100B1200LB
• Description: 1-Phase Rectifier Bridges with Standard Diodes
• Manufacturer: IXYS

Specifications of DLA100B1200LB

• Vrrm, (v): 1200
• Vvrms, (v): -
• Idavm, (a): 124
• @ Tc, (°c): 80
• Ifsm, 10 Ms, Tvj = 45°c, (a): 400
• Vt0, (v): 0.75
• Rt, (mohms): 4.2
• Tvjm, (°c): 175
• Rthjc, Per Chip, (k/w): 1
• Rthjh, Per Chip, (k/w): 1.45
• Package Style: ISOPLUS-SMPD

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P
[W]
Z
[A]
K/W
I
F
tot
thJC
Fig. 4 Power dissipation vs. bridge output current and ambient temperature
100
180
160
140
120
100
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
80
60
40
20
0.001
0
0
Fig. 1 Forward current versus
0.0
Fig. 6 Transient thermal impedance junction to case
0
P
T
tot
VJ
= Power losses
= 150°C
voltage drop per diode
of all diodes
0.5
125°C
25°C
20
V
F
1.0
I
d(AV)M
[V]
0.01
40
1.5
[A]
sin. 180°
60
rect.
D = 0.5
2.0
I
[A]
FSM
t [s]
0.1
0
500
400
300
200
100
20 40 60 80 100 120 140 160 180 200
0.001
0
Fig. 2 Surge overload current
50 Hz, 80% V
T
VJ
0.01
T
= 150°C
amb
1
t [s]
RRM
[°C]
T
VJ
0.3 K/W
0.7 K/W
1.2 K/W
= 45°C
0.1
10 K/W
R
2 K/W
3 K/W
5 K/W
thHA
:
10
1
I
d(AV)M
[A
[A]
I
2
2
t
100
s]
10
10
80
60
40
20
0
Constants for Z
1
2
3
4
3
2
i
Fig. 3 I
1
0
DLA 100B1200LB
Fig. 5 Max. bridge output current
R
25
thi
0.09
0.116
0.386
0.128
T
VJ
[K/W]
vs. case temperature
2
50
= 45°C
t versus time per diode
2
sin. 180°
per diode
V
75 100 125 150 175
T
t [ms]
R
C
thJC
0.003
0.062
0.1
0.55
t
= 0 V
i
[°C]
[s]
T
4 5 6 7 8 9
VJ
calculation:
rect. D = 0.5
= 150°C
per diode
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