GUO40-08NO1 IXYS, GUO40-08NO1 Datasheet - Page 5

• Manufacturer Part Number: GUO40-08NO1
• Description: 3-Phase Rectifier Bridges with Standard Diodes
• Manufacturer: IXYS

Specifications of GUO40-08NO1

• Vrrm, (v): 800
• Vrsm, (v): 900
• Idavm, (a): 40
• @ Th, (°c): -
• @ Tc, (°c): 85
• Ifsm, 10 Ms, Tvj = 45°c, (a): 370
• Vt0, (v): 0.86
• Rt, (mohms): 12.9
• Tvjm, (°c): 175
• Rthjc, Per Chip, (k/w): 4.30
• Rthjh, Per Chip, (k/w): -
• Package Style: GUFP

[W]
[A]
[K/W]
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Rectifier
120
100
80
60
40
20
50
40
30
20
10
0
0.001
0
5
4
3
2
1
0
0.0
0
Fig. 1 Forward current versus
Fig. 4 Power dissipation versus direct output current
Fig. 6 Transient thermal impedance junction to case
10
T
0.5
VJ
voltage drop per diode
=125°C
and ambient temperature, sine 180°
20
1.0
0.01
T
[V]
VJ
= 25°C
30
[A]
1.5
40
2.0
0
0.1
30
[s]
[A]
140
120
100
80
60
40
20
60
0.001
0
Fig. 2 Surge overload current
f = 50 Hz
V
R
= 0.8V
90
T
VJ
Data according to IEC 60747and per diode unless otherwise specified
= 125°C
1
0.01
[°C]
RRM
R
thHA
120
T
[K/W]
VJ
[s]
= 25°C
0.4
10
150
1
2
5
0.1
180
10
s
1
[A
[A]
2
s]
1000
100
50
40
30
20
10
0
Constants for Z
i
1
2
3
4
Fig. 3 I
0
1
Fig. 5 Max. forward current
V
R
T
R
GUO40-08NO1
= 0 V
VJ
thi
0.302
1.252
1.582
1.164
40
= 45°C
2
[K/W]
t versus time per
vs. case temperature
80
T
[ms]
thJC
[°C]
VJ
0.002
0.032
0.227
0.82
= 125°C
120
t
calculation:
i
[s]
160
diode
20110310a
1
0