VUO162-16NO7 IXYS, VUO162-16NO7 Datasheet
VUO162-16NO7
Manufacturer Part Number
VUO162-16NO7
Description
3-Phase Rectifier Bridges with Standard Diodes
Manufacturer
IXYS
Datasheet
1.VUO162-16NO7.pdf
(3 pages)
Specifications of VUO162-16NO7
Vrrm, (v)
1600
Vrsm, (v)
1700
Idavm, (a)
164
@ Th, (°c)
-
@ Tc, (°c)
115
Ifsm, 10 Ms, Tvj = 45°c, (a)
1800
Vt0, (v)
0.77
Rt, (mohms)
4.1
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
0.4
Rthjh, Per Chip, (k/w)
0.5
Package Style
PWS-E-flat
Standard Rectifier Module
3~ Bipolar Bridge
Part number
VUO162-16NO7
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Symbol
V
V
V
r
T
P
I
I²t
C
IXYS reserves the right to change limits, conditions and dimensions.
© 2009 IXYS all rights reserved
I
I
R
Features / Advantages:
R
DAV
FSM
F
RRM
F0
VJ
tot
F
thJC
J
bridge output current
Definition
max. repetitive reverse voltage
reverse current
forward voltage
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
value for fusing
junction capacitance
for power loss calculation only
Applications:
● Diode Bridge for main rectification
Conditions
V =
V =
I =
I =
I =
I =
120° sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V =
F
F
F
F
R
R
R
1600
1600
110
110
400
55
55
Data according to IEC 60747and per diode unless otherwise specified
A
A
A
A
V
V
V; f = 1 MHz
2
5
4
3
T
T
T
T
T
T
T
T
T
V
T
V
T
V
T
V
T
1
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
R
VJ
R
VJ
R
VJ
R
VJ
= 25°C
= 25°C
=
= 25°C
=
=
=
= 25°C
=
=
=
=
= 25°C
= 0 V
= 0 V
= 0 V
= 0 V
150
125
115
150
150
150
45
45
● Housing:
● Cu base plate internal DCB isolated
● Easy to mount with two screws
● RoHS compliant
V
I
V
Package:
°C
°C
°C
°C
°C
°C
°C
°C
DAV
VUO162-16NO7
RRM
F
min.
=
=
=
-40
R a t i n g s
PWS-E Flat
1600
typ.
1.02 V
164
60
max.
1600
1.11
1.25
1.02
1.24
0.77
0.40 K/W
V
A
1.80
1.95
1.53
1.65
16.2
15.7
11.7
11.3
200
164
150
310
4.1
tentative
2
20090727
kA²s
kA²s
kA²s
kA²s
Unit
mΩ
mA
µA
kA
kA
kA
kA
pF
°C
W
V
V
V
V
V
A
V
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VUO162-16NO7 Summary of contents
Page 1
... Hz), sine 8,3 ms; (60 Hz), sine ms; (50 Hz), sine 8,3 ms; (60 Hz), sine 400 MHz Data according to IEC 60747and per diode unless otherwise specified VUO162-16NO7 tentative V = 1600 V RRM 164 DAV Package: ● Housing: PWS-E Flat ● ...
Page 2
... IXYS all rights reserved Conditions per pin second minute Part Name Marking on Product VUO162-16NO7 Similar Part Package VUO160-16NO7 PWS-E Data according to IEC 60747and per diode unless otherwise specified VUO162-16NO7 Ratings min. typ. 0.10 -40 220 4.25 3600 3000 10 9.4 Delivering Mode ...
Page 3
... Max. allowed screw-in depth: 7 IXYS reserves the right to change limits, conditions and dimensions. © 2009 IXYS all rights reserved 12 Data according to IEC 60747and per diode unless otherwise specified VUO162-16NO7 tentative 20090727 ...