VUO52-22NO1 IXYS, VUO52-22NO1 Datasheet - Page 3

• Manufacturer Part Number: VUO52-22NO1
• Description: 3-Phase Rectifier Bridges with Standard Diodes
• Manufacturer: IXYS

Specifications of VUO52-22NO1

• Vrrm, (v): 2200
• Vrsm, (v): 2300
• Idavm, (a): 54
• @ Th, (°c): 90
• Ifsm, 10 Ms, Tvj = 45°c, (a): 350
• Vt0, (v): 0.80
• Rt, (mohms): 12.5
• Tvjm, (°c): 130
• Rthjh, Per Chip, (k/w): 1.50
• Package Style: V1-A-Pack

Zth
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
P
JK
I
F
tot
K/W
200
160
120
1.6
1.2
0.8
0.4
0.0
60
50
40
30
20
10
W
80
40
A
0
0
10
0.0
0
Fig. 1 Forward current versus
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 6 Transient thermal impedance per diode
-3
T
T
10
0.5
VJ
VJ
= 25°C
= 130°C
voltage drop per diode
20
1.0
10
-2
30
1.5
40
ma x.
typ.
2.0
V
50
F
10
I
V
dAVM
A
-1
2.5
0
I
FSM
25
300
250
200
150
100
Fig. 2 Surge overload current per diode
50
A
0
10
10
-3
0
50
I
FSM
: Crest value. t: duration
75
Zth
10
JK
-2
10
10 0
1
R
0.5
1
1.5
2
3
4
6
°C
thKA
10
s
12 5
T
K/W
-1
T
t
VJ
t
VJ
50 Hz
0.8 x V
= 45°C
= 130°C
VUO 52
T
s
A
150
10
RRM
2
10
0
I
dAVM
I
1000
2
A
t
Constants for Z
100
2
60
50
40
30
20
10
s
A
0
1
2
3
4
1
0
i
Fig. 3 I
Fig. 5 Maximum forward current
25
T
R
VJ
(1-10 ms) per diode
at case temperature
2
thi
0.005
0.2
0.845
0.45
= 45°C
t versus time
50
(K/W)
thJC
calculation:
75
VUO 52
T
VJ
10 0
= 130°C
0.008
0.05
0.06
0.3
t
t
i
12 5
(s)
20100503a
ms
T
°C
3 - 3
K
150
1
0