VVZB120-16ioX IXYS, VVZB120-16ioX Datasheet - Page 2

• Manufacturer Part Number: VVZB120-16ioX
• Description: 3-Phase Rectifier Bridge with Brake
• Manufacturer: IXYS

Specifications of VVZB120-16ioX

• Vrrm, Rect, (v): 1600
• Idav, Rec, (a): 120
• @ Th, Rect, (°c): -
• @ Tc, Rect, (°c): 80
• Vces, Igbt, (v): 1200
• Ic80, Igbt, (a): 107
• Vrrm, Fast Diode, (v): 1200
• If(av), Fast Diode, (a): 40
• Trr, Fast Diode, (ns): 150
• Package Style: V2-Pack

Symbol
V
V
V
I
V
r
R
P
I
I²t
C
P
P
(di/dt)
(dv/dt)
V
I
V
I
I
I
t
t
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
I
R
Rectifier
R/D
TSM
GT
GD
L
H
D(AV)M
T
gd
q
RSM/DSM
RRM/DRM
T0
tot
GM
GAV
GT
GD
T
thCH
J
thJC
cr
cr
Definition
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
bridge output current
threshold voltage
slope resistance
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
for power loss calculation only
V
T
R
V
I =
I =
I =
I =
T =
rectangular
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
V =
t = 30 µs
t =
t = 200 µs;
I
V = ⅔ V
V = 6 V
V = 6 V
V = ⅔ V
t
I
V = 6 V
V = ½ V
I
V =
di/dt =
T
T
T
T
P
P
P
G
G
G
p
C
VJ
D
R/D
R/D
R
D
D
D
D
D
R
GK
= 0.45
= 30
= 0.45
= 0.45
= 150°C; f = 50 Hz
300 µs
=
=
= ∞; method 1 (linear voltage rise)
Conditions
400
100 V; I
1600
1600
80
40
80
40
80
°C
10
µs
A; V = ⅔ V
DRM
DRM
DRM
A
A
A
A
V
A;
A;
R
Data according to IEC 60747and per diode unless otherwise specified
A/µs;
V
V
di /dt
GK
f = 1 MHz
di /dt
G
D
di /dt
T
= ∞
G
G
= 40
d =
dv/dt =
= 0.45
= 0.45
= 0.45
⅓
DRM
A;
A/µs
V = ⅔ V
20
D
A/µs
A/µs
V/µs;
non-repet., I = 40 A
repetitive, I =
t
DRM
p
= 200
T
T
T
T
T
T
T
T
T
T
V
T
V
T
V
T
V
T
T
T = 150 °C
T =
T =
T =
T =
T =
T =
T =
T =
T =
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
VJ
R
VJ
R
VJ
R
VJ
R
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
T
T
µs
= 25°C
= 25°C
= 25°C
=
= 25°C
=
=
=
= 25°C
=
=
=
=
= 25°C
=
= 0 V
= 0 V
= 0 V
= 0 V
150
150
150
150
150
150
150
125
125
-40
-40
120 A
25
25
25
25
25
45
45
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
VVZB120-16ioX
min.
Ratings
typ.
150
0.2
54
max.
1700
1600
1000
1.14
1.32
1.06
1.29
0.86
1.00 K/W
2.37
1.77
1.73
2.45
300
120
120
700
755
595
645
150
500
200
450
200
5.4
0.5
1.5
1.6
0.2
10
10
95
10
5
2
20111115b
A/µs
A/µs
V/µs
kA²s
kA²s
kA²s
kA²s
K/W
Unit
mΩ
mA
mA
mA
mA
mA
mA
µA
pF
µs
µs
W
W
W
W
V
V
V
V
V
V
A
V
A
A
A
A
V
V
V