VUM33-06PH IXYS, VUM33-06PH Datasheet - Page 7

• Manufacturer Part Number: VUM33-06PH
• Description: 1 Ph. PFC Modules (1 Ph. Bridge + MOSFET Boost)
• Manufacturer: IXYS

Specifications of VUM33-06PH

• Vdss, Max, (v): 600
• Id25, Tc = 25°c, (a): 47
• Rds(on), Max, Tj = 25°c, (mohm): 0.12
• Vrrm, Boost Diodes, (v): 600
• Vrrm, Rectifier Diodes, (v): 800
• Package Style: V1-B-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[µC]
[ns]
[µC]
Q
Q
t
rr
RR
RR
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.8
0.7
0.6
0.5
0.4
0.3
80
70
60
50
40
30
500
4
4
Fig. 13 Reverse recovery time t
Fig. 15 Reverse recovery charge Q
Fig. 17 Typ. turn off characteristics
V
T
10 Ω
R
VJ
V
T
R
VJ
= 380 V
= 125°C
550
= 125°C
= 380 V
5
5
diode versus R
of the boost diode versus R
of the boost diode versus di/dt
600
6
6
6.8 Ω
-di/dt [A(µs]
650
7
7
R
R
40 A
G
5.6 Ω
G
G
[Ω]
of boost MOSFET
[Ω]
700
8
8
20 A
rr
750
9
9
of the boost
RR
G
4.7 Ω
800
I
10
10
RM
10 A
40 A
20 A
40 A
20 A
10 A
10 A
850
11
11
[mJ]
E
[A]
rec
I
F
I
[A]
RM
0.12
0.10
0.08
0.06
0.04
0.02
60
50
40
30
20
10
20
18
16
14
12
10
0
0.0
Fig. 14 Reverse recovery current I
4
4
Fig. 16 Reverse recovery energy E
Fig. 18 Forward characteristics boost diode
V
T
V
T
VJ
VJ
R
R
= 125°C
= 380 V
= 125°C
= 380 V
5
5
0.5
diode versus R
of the boost diode versus R
125°C
150°C
25°C
6
6
1.0
7
7
R
VUM 33-06PH
R
V
G
G
1.5
F
G
[Ω]
[Ω]
[V]
of the boost MOSFET
8
8
2.0
9
9
RM
rec
G
of the boost
2.5
10
10
40 A
10 A
20 A
40 A
10 A
20 A
20100921b
7 - 8
3.0
11
11