IR3081AMTR International Rectifier, IR3081AMTR Datasheet - Page 31

• Manufacturer Part Number: IR3081AMTR
• Description: XPHASE VR 10.0 Control IC. The Control IC combined with an IR XPhase TM Phase IC provides a full featured and flexible way to implement a complete VR 10.0 power solution.
• Manufacturer: International Rectifier

Specifications of IR3081AMTR

• Package: 28-Lead MLPQ
• Circuit: X-Phase Controller IC
• Switch Freq (khz): 150kHz to 1.0MHz
• Pbf: PbF Option Available

Calculate the programming resistor.
From Figure 15, the source current of VDAC pin is 250uA. The VDAC up-slope slew rate is
Over Current Setting Resistor R
The room temperature is 25ºC and the target PCB temperature is 100 ºC. The phase IC die temperature is about 1
ºC higher than that of phase IC, and the inductor temperature is close to PCB temperature.
Calculate Inductor DC resistance at 100 ºC,
The current sense amplifier gain is 34 at 25ºC, and its gain at 101ºC is calculated as,
Set the over current limit at 135A. From Figure 14, the bias current of OCSET pin (I
R
the current sense amplifier input resistor mismatch.
Calculate constant K
No Load Output Voltage Setting Resistor R
From Figure 14, the bias current of FB pin is 90uA with R
Body Braking Related Resistors R
N/A. The body braking during Dynamic VID is disabled.
C
G
R
SR
R
K
R
=
R
R
L
OSC
OCSET
VDAC
VDAC
FB
DRP
CS
P
(
UP
_
135
MAX
=
Page 31 of 39
_
6
=
MIN
=13.3kΩ. The total current sense amplifier input offset voltage is 0.55mV, which includes the offset created by
=
=
(
V
R
=
=
∗
=
=
I
R
I
L
. 0
0
C
SR
SOURCE
−
[
_
FB
=
R
5 .
VDAC
64
R
I
MAX
V
L
G
SINK
DOWN
LIMIT
∗
+
O
_
n
*
CS
R
ROOM
)
3
10
∗
∗
L
2 .
C
_
V
V
_
I
n
=
ROOM
−
VDAC
∗
O
*
O
MAX
LIMIT
3
=
∗
∗
R
10
250
_
/(
∗
68
R
1 [
L
I
NLOFST
2
. 1
L
FB
−
O
_
5 .
P,
∗
2
+
*
15
∗
32
∗
/
MAX
170
*
G
10
*
3850
∗
V
10
the ratio of inductor peak current over average current in each phase,
n
1 [
CS
10
=
I
R
+
−
−
−
∗
*
L
9
∗
0
. 0
−
_
−
6
1470
_
10
5 .
*
MIN
3
f
1 (
V
55
MAX
SW
10
=
/
CS
+
+
−
10
3
6
−
*
∗
K
_
(
7 .
6
*
=
10
−
3
68
TOFST
∗
10
) 2
P
6
mV
2 .
162
(
)
−
T
*
OCSET
=
−
*
+
3
=
L
10
6
* )
10
V
68
_
/
∗
BBFB
∗
(
6
∗
MAX
12
CS
uS
−
. 0
∗
(
30
−
nF
n
9
T
15
64
. 0
_
)
−
∗
IC
2 .
2
TOFST
−
91
. 1
R
*
_
and R
T
=
/(
O
28
10
MAX
*
ROOM
90
1
10
=
)
2 .
−
]
FB
3
∗
∗
*
. 0
Ω
−
*
. 1
−
10
G
3
)]
BBDRP
64
30
and Adaptive Voltage Positioning Resistor R
T
28
CS
=
−
ROOM
*
2 .
6
0
/(
_
10
)
5 .
100
MIN
=
=
−
*
135
576
3
)]
. 6
10
*
∗
/
OSC
34
=
10
I
−
20
6 /
Ω
3
OCSET
34
90
k
∗
−
*
Ω
9
=13.3kΩ.
1 [
10
∗
*
∗
+
10
1 [
12
−
3850
3
−
−
∗
−
6
1470
800
*
. 0
*
. 0
55
10
64
*
*
*
−
10
10
6
10
*
∗
10
3
−
(
−
∗
6
100
3
−
) 2
∗
∗
3
(
6
101
−
=
∗
25
. 0
. 0
−
)]
32
91
25
=
*
. 0
)]
10
64
=
−
3
m
30
Ω
=
2 .
162
OCSET
Ω
DRP
IR3081A
1/31
) is 90uA with
/05