IRG7S319UPBF International Rectifier, IRG7S319UPBF Datasheet
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Manufacturer Part Number
IRG7S319UPBF
Description
330V PDP Trench IGBT in a D2Pak package
Manufacturer
International Rectifier
Specifications of IRG7S319UPBF
Package
D2-Pak
Circuit
Discrete
Switching
Soft
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
330
Ic @ 25c (a)
45
Ic @ 100c (a)
20
Vce(on)@25c Typ (v)
1.26
Vce(on)@25c Max (v)
1.43
Pd @25c (w)
96
Environmental Options
PbF
Features
l
l
l
l
l
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
www.irf.com
Absolute Maximum Ratings
V
I
I
I
P
P
T
T
Thermal Resistance
R
C
C
RP
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
Low V
High repetitive peak current capability
Lead Free package
circuits in PDP applications
for improved panel efficiency
J
STG
GE
D
D
θJC
@ T
@ T
@T
@T
@ T
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE(on)
= 25°C
and Energy per Pulse (E
Gate-to-Emitter Voltage
Continuous Collector Current, V
Continuous Collector, V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Junction-to-Case
d
Parameter
Parameter
PULSE
CE(on)
GE
PDP TRENCH IGBT
@ 15V
TM
and low E
GE
)
@ 15V
V
V
I
T
RP
J
CE
CE(ON)
PULSE
max
max @ T
min
G
typ. @ I
TM
n-channel
Gate
rating per silicon area which improve panel
G
C
= 25°C
Typ.
–––
Key Parameters
C
IRG7S319UPbF
E
C
= 20A
-40 to + 150
Max.
0.77
Collector
170
300
±30
45
20
96
38
C
Max.
1.3
1.26
330
170
150
IRG7S319UPbF
D
Emitter
2
Pak
E
G
C
Units
Units
W/°C
°C/W
E
°C
W
V
A
°C
10/2/09
V
V
A
1
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IRG7S319UPBF Summary of contents
... CE(on) PULSE Parameter @ 15V GE @ 15V GE Parameter d IRG7S319UPbF Key Parameters 330 = 20A 1.26 C 170 150 ° Pak E IRG7S319UPbF C E Collector Emitter Max. Units ± 170 0.77 W/°C - 150 °C 300 Typ. Max. Units ––– 1.3 °C/W ...
Electrical Characteristics @ T Parameter BV Collector-to-Emitter Breakdown Voltage CES ΔΒV /ΔT Breakdown Voltage Temp. Coefficient CES J V Static Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ΔV /ΔT Gate Threshold Voltage Coefficient GE(th Collector-to-Emitter Leakage Current ...
V CE (V) Fig 1. Typical Output Characteristics @ 25°C 200 160 120 (V) Fig 3. Typical Output Characteristics @ 125°C 200 ...
T C (°C) Fig 7. Maximum Collector Current vs. Case Temperature 1100 240V L = 220nH 1000 C = variable 100°C 900 800 700 600 500 ...
Cies 100 Coes Cres 10 0 100 V CE (V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 ...
A RG DRIVER L B Ipulse RG DUT Fig 16a. t and E Test Circuit st PULSE Fig 16c. E Test Waveforms PULSE 6 C PULSE A PULSE B VCC Fig 16b. t Energy Current 0 ...
T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" OR Note: For the most current drawing please refer to IR website at ...
Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...
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