IRG7S319UPBF International Rectifier, IRG7S319UPBF Datasheet

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IRG7S319UPBF

Manufacturer Part Number
IRG7S319UPBF
Description
330V PDP Trench IGBT in a D2Pak package
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7S319UPBF

Package
D2-Pak
Circuit
Discrete
Switching
Soft
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
330
Ic @ 25c (a)
45
Ic @ 100c (a)
20
Vce(on)@25c Typ (v)
1.26
Vce(on)@25c Max (v)
1.43
Pd @25c (w)
96
Environmental Options
PbF
Features
l
l
l
l
l
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
www.irf.com
Absolute Maximum Ratings
V
I
I
I
P
P
T
T
Thermal Resistance
R
C
C
RP
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
Low V
High repetitive peak current capability
Lead Free package
circuits in PDP applications
for improved panel efficiency
J
STG
GE
D
D
θJC
@ T
@ T
@T
@T
@ T
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE(on)
= 25°C
and Energy per Pulse (E
Gate-to-Emitter Voltage
Continuous Collector Current, V
Continuous Collector, V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Junction-to-Case
d
Parameter
Parameter
PULSE
CE(on)
GE
PDP TRENCH IGBT
@ 15V
TM
and low E
GE
)
@ 15V
V
V
I
T
RP
J
CE
CE(ON)
PULSE
max
max @ T
min
G
typ. @ I
TM
n-channel
Gate
rating per silicon area which improve panel
G
C
= 25°C
Typ.
–––
Key Parameters
C
IRG7S319UPbF
E
C
= 20A
-40 to + 150
Max.
0.77
Collector
170
300
±30
45
20
96
38
C
Max.
1.3
1.26
330
170
150
IRG7S319UPbF
D
Emitter
2
Pak
E
G
C
Units
Units
W/°C
°C/W
E
°C
W
V
A
°C
10/2/09
V
V
A
1

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IRG7S319UPBF Summary of contents

Page 1

... CE(on) PULSE Parameter @ 15V GE @ 15V GE Parameter d IRG7S319UPbF Key Parameters 330 = 20A 1.26 C 170 150 ° Pak E IRG7S319UPbF C E Collector Emitter Max. Units ± 170 0.77 W/°C - 150 °C 300 Typ. Max. Units ––– 1.3 °C/W ...

Page 2

Electrical Characteristics @ T Parameter BV Collector-to-Emitter Breakdown Voltage CES ΔΒV /ΔT Breakdown Voltage Temp. Coefficient CES J V Static Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ΔV /ΔT Gate Threshold Voltage Coefficient GE(th Collector-to-Emitter Leakage Current ...

Page 3

V CE (V) Fig 1. Typical Output Characteristics @ 25°C 200 160 120 (V) Fig 3. Typical Output Characteristics @ 125°C 200 ...

Page 4

T C (°C) Fig 7. Maximum Collector Current vs. Case Temperature 1100 240V L = 220nH 1000 C = variable 100°C 900 800 700 600 500 ...

Page 5

Cies 100 Coes Cres 10 0 100 V CE (V) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 ...

Page 6

A RG DRIVER L B Ipulse RG DUT Fig 16a. t and E Test Circuit st PULSE Fig 16c. E Test Waveforms PULSE 6 C PULSE A PULSE B VCC Fig 16b. t Energy Current 0 ...

Page 7

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" OR Note: For the most current drawing please refer to IR website at ...

Page 8

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

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