IRG7PH50U-EP International Rectifier, IRG7PH50U-EP Datasheet - Page 2

• Manufacturer Part Number: IRG7PH50U-EP
• Description: 1200V Low VCEon Trench Discrete IGBT in a TO-247AD package
• Manufacturer: International Rectifier

Specifications of IRG7PH50U-EP

• Package: TO-247AD
• Circuit: Discrete
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 140
• Ic @ 100c (a): 90
• Vce(on)@25c Typ (v): 1.70
• Vce(on)@25c Max (v): 2.00
• Ets Typ (mj): 5.8
• Ets Max (mj): 7.8
• Pd @25c (w): 556
• Environmental Options: PbF

IRG7PH50UPbF/IRG7PH50U-EP
Notes:

‚
ƒ
„
∆V
∆V
Electrical Characteristics @ T
V
V
V
gfe
I
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
(BR)CES
CE(on)
GE(th)
on
off
total
on
off
total
ies
oes
res
g
ge
gc
V
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Refer to AN-1086 for guidelines for measuring V
R
2
(BR)CES
GE(th)
CC
θ
is measured at
/∆TJ
= 80% (V
/∆T
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
CES
), V
J
GE
= 20V, L = 200µH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 5.0Ω.
(BR)CES
safely.
Min.
Min.
1200
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
5800
Typ.
1700
Typ.
3600
2200
5600
3900
9500
6000
290
110
430
500
210
190
130
1.0
1.7
2.0
2.1
-17
2.0
55
40
35
40
45
30
45
—
—
—
Max. Units
Max. Units
4600
3200
7800
±200
100
440
170
500
2.0
6.0
60
55
60
65
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C V
µA
nA
nC
pF
µJ
ns
µJ
ns
V
V
V
S
V
I
I
I
V
V
V
V
V
I
V
V
I
R
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH50UDPbF
I
R
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH50UDPbF
V
V
f = 1.0Mhz
V
Rg = 5.0Ω, V
C
C
C
C
C
C
I
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
G
G
GE
CC
CC
= 50A, V
= 50A, V
= 50A, V
= 50A
= 50A, V
= 50A, V
=5.0Ω, L=200µH, T
= 200A
= 5.0Ω, L = 200µH,T
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±30V
= 15V
= 600V
= 0V
= 30V
= 960V, Vp =1200V
Conditions
GE
GE
d
, I
, I
C
C
GE
GE
GE
CC
CC
C
C
CE
CE
C
= 100µA
= 1mA (25°C-150°C)
GE
= 2.0mA
= 1mA (25°C - 175°C)
= 50A, PW = 80µs
= 15V, T
= 15V, T
= 15V, T
= 600V, V
= 600V, V
= 1200V
= 1200V, T
= +20V to 0V, T
J
Conditions
J
J
J
= 175°C
GE
GE
= 25°C
= 150°C
= 175°C
J
= 25°C
J
=15V
= 15V
= 175°C
Ãd
d
J
d
d
d
=175°C
www.irf.com