IRG7IC28UPBF International Rectifier, IRG7IC28UPBF Datasheet

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IRG7IC28UPBF

Manufacturer Part Number
IRG7IC28UPBF
Description
600V Discrete PDP Trench IGBT in a TO-220AB package
Manufacturer
International Rectifier
Datasheet

Specifications of IRG7IC28UPBF

Package
TO-220AB
Circuit
Discrete
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
600
Ic @ 25c (a)
25
Ic @ 100c (a)
12
Vce(on)@25c Typ (v)
1.70
Vce(on)@25c Max (v)
1.95
Pd @25c (w)
40
Environmental Options
PbF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG7IC28UPBF
Manufacturer:
RENESAS
Quantity:
569
Features
l
l
l
l
l
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
www.irf.com
Absolute Maximum Ratings
V
I
I
I
P
P
T
T
Thermal Resistance
R
R
C
C
RP
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
Low V
High repetitive peak current capability
Lead Free package
GE
D
D
J
STG
circuits in PDP applications
for improved panel efficiency
θJC
θJA
@ T
@ T
@ T
@T
@T
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE(on)
= 25°C
and Energy per Pulse (E
Gate-to-Emitter Voltage
Continuous Collector Current, V
Continuous Collector, V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Junction-to-Case
Junction-to-Ambient
d
Parameter
Parameter
d
PULSE
CE(on)
GE
PDP TRENCH IGBT
@ 15V
TM
and low E
GE
)
@ 15V
V
V
I
T
RP
J
CE
CE(ON)
PULSE
max
max @ T
min
G
typ. @ I
TM
n-channel
Gate
rating per silicon area which improve panel
G
C
= 25°C
Typ.
–––
–––
C
Key Parameters
E
C
IRG7IC28UPbF
= 40A
10lb
-40 to + 150
x
in (1.1N
Max.
0.32
Collector
225
300
±30
25
12
40
16
C
x
m)
Max.
3.1
65
1.70
600
225
150
Emitter
E
G
Units
Units
C
09/02/2010
W/°C
°C/W
E
°C
W
V
A
N
°C
V
V
A
1

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IRG7IC28UPBF Summary of contents

Page 1

... max PULSE J G n-channel G Gate TM and low E rating per silicon area which improve panel CE(on) PULSE Parameter @ 15V GE @ 15V GE Parameter d d IRG7IC28UPbF Key Parameters 600 = 40A 1.70 C 225 150 ° Collector Emitter Max. Units ± 225 ...

Page 2

... IRG7IC28UPbF Electrical Characteristics @ T Parameter BV Collector-to-Emitter Breakdown Voltage CES V Emitter-to-Collector Breakdown Voltage (BR)ECS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient CES J V Static Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Gate Threshold Voltage Coefficient GE(th Collector-to-Emitter Leakage Current ...

Page 3

... 12V 100 10V 8. 6. Fig 4. Typical Output Characteristics @ 150°C 2.0 1.8 1.6 1.4 1 IRG7IC28UPbF 18V 15V 12V 10V 18V 15V 12V 10V 8. 6.0V 0 ...

Page 4

... IRG7IC28UPbF 100 T C (°C) Fig 7. Maximum Collector Current vs. Case Temperature 950 240V 900 L = 220nH 100°C 850 C = variable 800 750 700 650 600 550 500 450 160 170 180 190 200 210 220 230 240 Peak Collector Current (A) Fig 9 ...

Page 5

... τ J τ J τ τ 1 τ 2 τ 1 Ci= τi/Ri Ci i/Ri 0.0001 0.001 0. Rectangular Pulse Duration (sec) IRG7IC28UPbF 40A V CES = 120V V CES = 300V V CES = 400V Total Gate Charge (nC 15V GE Ri (°C/W) τi (sec) R ...

Page 6

... IRG7IC28UPbF A RG DRIVER L B Ipulse RG DUT Fig 16a. t and E st PULSE V CE Fig 16c. E Test Waveforms PULSE 6 C PULSE A PULSE B VCC Test Circuit Energy I Current Fig 16b. t Test Waveforms st L DUT 1K Fig Gate Charge Circuit (turn-off) www.irf.com VCC ...

Page 7

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com IRG7IC28UPbF DSAD'#B !#F Ã"#ÃÃÃÃÃÃÃÃÃ"! Data and specifications subject to change without notice. ...

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