IRG4PC50UD International Rectifier, IRG4PC50UD Datasheet - Page 2

• Manufacturer Part Number: IRG4PC50UD
• Description: 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
• Manufacturer: International Rectifier

Specifications of IRG4PC50UD

• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 55
• Ic @ 100c (a): 27
• Vce(on)@25c Typ (v): 1.65
• Vce(on)@25c Max (v): 2.00
• Ets Typ (mj): 1.58
• Ets Max (mj): 1.9
• Qrr Typ Nc 25c: 112
• Qrr Max Nc 25c: 375
• Vf Typ: 1.30
• Pd @25c (w): 200
• Environmental Options: PbF

IRG4PC50UD
Electrical Characteristics @ T
Switching Characteristics @ T
V
V
V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
d(off)
f
d(on)
d(off)
r
r
f
rr
rr
V
fe
E
V
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ies
oes
res
g
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown VoltageS 600
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage ----
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
----
----
----
----
3.0
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
----
16
4000
0.60
1.65
0.99
0.59
1.58
180
140
240
130
250
105
112
420 1200
250
160
----
2.0
1.6
----
-13
----
1.3
1.2
---- ±100
2.3
4.5
8.0
----
24
25
61
46
25
74
44
27
13
52
50
6500
250
110
375
270
230
160
----
----
2.0
----
----
6.0
----
1.7
1.5
----
----
----
----
1.9
----
----
----
----
----
----
----
----
----
----
----
---- mV/°C V
38
90
75
10
15
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
pF
nC
V
V
S
V
ns
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
See Fig. 9, 10, 11, 18
T
I
V
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
diode reverse recovery.
Energy losses include "tail" and
diode reverse recovery.
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 27A
= 55A
= 27A, T
= 25A
= 25A, T
= 27A
= 27A, V
= 27A, V
= 25°C
= 150°C,
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
See Fig.
See Fig.
= 150°C
= 150°C
Conditions
Conditions
= 250µA
= 1.0mA
See Fig.
G
G
C
= 250µA
= 250µA
= 480V
= 480V
See Fig. 9, 10, 11, 18
= 600V
= 600V, T
= 5.0
= 5.0
= 27A
15
14
16
See Fig. 8
See Fig. 7
www.irf.com
V
See Fig. 2, 5
See Fig. 13
I
di/dt 200A/µs
F
J
GE
= 150°C
= 25A
V
R
= 15V
= 200V