CM1000DXL-24S Powerex Inc, CM1000DXL-24S Datasheet - Page 3

• Manufacturer Part Number: CM1000DXL-24S
• Manufacturer: Powerex Inc
• Type: Dualr

Specifications of CM1000DXL-24S

• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 1000A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA500-01

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM1000DXL-24S
Dual IGBTMOD™ NX-S Series Module
1000 Amperes/1200 Volts
12/11 Rev. 4
Electrical Characteristics, T
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Internal Lead Resistance
Internal Gate Resistance
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
*2 Case temperature (T
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
diode (FWDi).
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
C
) and heatsink temperature (T
j
= 25°C unless otherwise specified
s
) is measured on the surface
R
(Terminal)
(Terminal)
V
V
V
Symbol
CC' + EE'
(Chip)
(Chip)
V
V
CE(sat)
CE(sat)
t
t
I
I
C
GE(th)
C
Q
E
C
d(on)
d(off)
E
CES
GES
t
E
Q
EC
EC
rr
oes
r
t
rr
ies
res
t
rr
on
off
g
r
f
G
*1
*1
*1
*1
*1
V
V
V
CC
I
I
CC
E
E
CC
I
I
I
I
C
C
C
C
I
I
I
I
I
E
= 1000A, V
I
E
= 1000A, V
V
C
C
E
E
= 600V, I
= 1000V, I
= 1000A, V
= 1000A, V
= 1000A, V
= 1000A, V
CC
T
= 600V, I
= 1000A, V
= 1000A, V
= 1000A, V
= 1000A, V
R
= 1000A, V
= 1000A, V
R
j
Per Switch,T
V
G
G
= 150°C, Inductive Load
V
Main Terminals-Chip,
GE
I
= 600V, I
V
V
CE
C
= 0Ω, Inductive Load
= 0Ω, Inductive Load
CE
GE
= 100mA, V
= ±15V, R
= 10V, V
Test Conditions
Per Switch
C
= V
= V
C
GE
GE
E
= 1000A, V
GE
GE
GE
GE
= 1000A, V
GE
GE
= 600A, V
CES
GE
GE
GES
GE
GE
C
= 0V, T
= 0V, T
C
= 15V, T
= 15V, T
= 15V, T
= 15V, T
= I
= 0V, T
= 0V, T
= 15V, T
= 15V, T
GE
= 0V, T
= 0V, T
, V
, V
= 25°C
E
G
CE
GE
CE
= 1000A,
= 0V
= 0Ω,
j
j
20.9
32.6
46.0
72.6
73.6
86.0
87.0
= 150°C
= 150°C
= 10V
GE
GE
GE
j
j
= 0V
= 0V
0
j
j
j
j
j
j
= 125°C
= 125°C
j
j
*2
= 125°C
= 150°C
= 125°C
= 150°C
= 25°C
= 25°C
LABEL SIDE
= 25°C
= 25°C
= ±15V,
= ±15V
= 15V
*5
*5
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
*5
*5
*5
*5
*5
*5
*5
*5
*5
*5
98.6
Tr1
Di1
94.0
Di2
Tr2
83.8
81.8
Di1
Th
Tr1
79.2
Tr2
Di2
Min.
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
57.6 42.2
Tr1
Di1
Di2
53.2 38.0
Tr2
Di1
Tr1
Di2
Tr2
2300
2.05
2.10
53.3
1.85
1.70
1.90
1.95
1.85
1.85
1.85
1.70
1.70
1.70
137
Typ.
27.2
2.0
Di1
89
73
Tr1
—
—
—
—
—
—
—
—
—
—
—
23.0
6
Di2
Tr2
0
0
Max.
2.30
2.30
2.15
2.15
800
200
600
300
300
100
0.5
6.6
0.5
1.7
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
0
26.4
40.0
72.2
85.8
73.2
86.8
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
mΩ
mA
µA
nC
µC
mJ
mJ
mJ
nF
nF
nF
ns
ns
ns
ns
ns
Ω
3