CM2400HC-34N Powerex Inc, CM2400HC-34N Datasheet - Page 5
![no-image](/images/manufacturer_photos/0/5/537/powerex_inc_sml.jpg)
CM2400HC-34N
Manufacturer Part Number
CM2400HC-34N
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet
1.CM2400HC-34N.pdf
(7 pages)
Specifications of CM2400HC-34N
Prx Availability
RequestQuote
Voltage
1700V
Current
2400A
Circuit Configuration
Single
Rohs Compliant
No
Recommended Gate Driver
VLA539-01R
Interface Circuit Ref Design
BG2A
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM2400HC-34N
Manufacturer:
MIT
Quantity:
20 000
4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
10000
2.5
1.5
0.5
HALF-BRIDGE SWITCHING ENERGY
CAPACITANCE CHARACTERISTICS
1000
3
2
1
0
100
10
0
CHARACTERISTICS (TYPICAL)
1
V
R
Tj = 125°C, Inductive load
0.1
CC
G(on)
= 850V, V
= 0.7 Ω, R
1000
V
f = 100kHz
GE
Collector-Emitter Voltage [V]
= 0V, Tj = 25°C
Collector Current [A]
GE
= ±15V
G(off)
(TYPICAL)
2000
= 1.6 Ω
1
3000
10
Cres
4000
Eoff
Erec
Cies
Eon
Coes
5000
CONFIDENTIAL
100
-10
-15
5
4
3
2
1
0
20
15
10
HALF-BRIDGE SWITCHING ENERGY
GATE CHARGE CHARACTERISTICS
-5
5
0
0
0
CHARACTERISTICS (TYPICAL)
V
V
Inductive load
CC
GE
= ±15V, Tj = 125°C
= 850V, I
V
Tj = 25°C
CE
2
= 850V, I
C
= 2400A
10
Gate Resistance [Ω]
CM2400HC-34N
C
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
(TYPICAL)
4
= 2400A
Gate Charge [µC]
Eon
6
20
Erec
HVM-1035-C
8
INSULATED TYPE
30
10
Eoff
40
12
5 of 7